WORKSHOP PAPER
Quantum Efficiency and Optical Cross-talk of Pixels with Backside Scattering Technique for Near-Infrared Imaging
Tae-Yon Lee1, Seungjae Oh1, Taehyoung Kim1, Hongki Kim1, Jihyun Kwak1, Masaru Ishii1, Surim Lee1, Hyoju Kim1, Yoonjay Han1, Changhwa Kim1, Jaehoon Jeon1, Dongseok Cho1, Seung Sik Kim1, Jonghyun Go1, In-Gyu Baek1, Hyuksoon Choi1, Jaekyu Lee1, Chang-Rok Moon1
1Semiconductor R&D Center, Samsung Electronics Co., Ltd., Samsungjeonja-ro 1, Hwaseong-si, Gyeonggi-do 18448, Korea

Abstract

We present performance of image sensor pixel with the structure of surface-limited local trench array to achieve backside scattering technique (BST), to enhance quantum efficiency of CMOS image sensor, especially at near-infrared wavelength. The pixel with BST structure of selection is demonstrated to exhibit significant improvement of quantum efficiency at 940nm, 1.5 times higher than that of pixel without BST, with acceptable inter-pixel cross-talk.
Publisher: IISS (Int. Image Sensors Society)
Year: 2021
Workshop: IISW
URL: https://doi.org/10.60928/jldx-htqc
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Keywords

Quantum Efficiency, Optical Cross-talk, Backside Scattering Technique,

References

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