WORKSHOP PAPER
Improvement of Conversion Gain and Pixel Linearity through Source Follower Drain Design in CMOS image sensors
Gyunha Park1, Jiyoun Song, Keunyeong Cho, Sooyeon Kim, Yongsang Park, Yoonseok Kim, Joonhyuk Hwang, Changkyu Lee, Myunghae Seo, Hoocheol Lee, Jihun Lim, Jonghyun Go
1Samsung Electronics Co, Hwaseong-City, South Korea

Abstract

In this study, we investigate the characteristics of CMOS image sensors with respect to the reduction in the drain width of the Source Follower (SF) transistor. Our results show that as the drain width decreases, the SF transistor capacitance relative to the area significantly reduces. Furthermore, as the drain width decreases, the short-channel effect improves. We believe that optimal width control in Source Follower design is essential and anticipate that it will make a significant contribution to the improvement of CMOS image sensor (CIS) characteristics.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/jm4z-jgpg
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Keywords

CMOS Image Sensors, Source follower Transistor, Random noise, Conversion Gain, Signal non linearity,

References

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