WORKSHOP PAPER
World first mass productive 0.8㎛ pixel size image sensor with new optical isolation technology to minimize optical loss for high sensitivity
Yunki Lee1, Jonghoon Park1, Bumsuk Kim1, Jungsaeng Kim1, Hyungeun Yoo1, Seungjoo Nah2, Donghyuk Park1, Taesung Lee1, Bomi Kim1, Dongmin Keum1, Heegeun Jeong2, Heesang Kwon3, Myoungsun Kim2, Sangil Jung2, Yitae Kim1, Changrok Moon1, Yongin Park1
1System LSI Division, Samsung Electronics Co., Ltd,
2Foundry Division, Samsung Electronics Co., Ltd,
3SystemLSI Division, Samsung Electronics Co., Ltd,

Abstract

More and more pixels are needed to implement CMOS image sensors with high resolution while reducing the size of the chips. As the beam size of the incoming light nears the pixel size, the light loss from the conventional metallic grid increases. Development of an architecture that minimizes optical losses is key technology to secure pixel performance of sub-micro sized pixel. In this paper, we analyzed the light loss according to the pixel size and the optical structure. Based on this, we are going to introduce a new isolation structure that minimizes optical losses applied to the world's first 0.8um pixel size product.
Publisher: IISS (Int. Image Sensors Society)
Year: 2019
Workshop: IISW
URL: https://doi.org/10.60928/ka1i-9po0
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Keywords

CMOS image sensors, optical losses, ISOCELL PLUS,

References

1) Y. Kim et al., "A 1/2.8-inch 24M pixel CMOS image sensor with 0.9㎛ pixels separated by full-depth trench isolation", Proc. ISSCC, Jan., 2018, 2018. https://doi.org/10.1109/isscc.2018.8310195
2) S. Choi et al., "An all pixel PDAF CMOS image sensor with 0.64㎛ x 1.28㎛ photodiode separated by self-aligned in-pixel deep trench isolation for high AF performance", IEEE Symp., VLSI Tech., Jun., 2017, 2017. https://doi.org/10.23919/vlsit.2017.7998212