WORKSHOP PAPER
Design and characterization of single-photon avalanche diodes in deep-cryogenic applications
Abstract
This paper explores the performance of CMOS single-photon avalanche diodes (SPADs) utilizing Global-Foundries 55 nm BCDLite technology at cryogenic temperatures (CT). SPADs with active diameters ranging from 2 to 60 µm were tested to evaluate performance. We measured I-V characteristics, dark count rate (DCR), photon detection probability (PDP), and breakdown voltage at various temperatures from CT to room temperature (RT). Measurements were conducted using a cryogenic probe station capable of reaching 4K. The study investigated the effects of CT on breakdown voltage and PDP and the impact of tunneling and trap-assisted thermal generation noise on DCR. These findings provide new insights into SPAD performance at CT, supporting advancements in quantum sensing, high-energy physics, and low-temperature photon detection.Keywords
Cryogenic temperature, dark count rate (DCR), photon detection probability (PDP), shallow trench isolation (STI), single-photon avalanche diode (SPAD),References
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