WORKSHOP PAPER
83.5 dB Dynamic Range Lead-Free SWIR Image Sensors Based on Monolithic Fabrication of InAs Thin-Film Quantum Dot Photodiodes
Myonglae Chu1, Wenya Song, Joo Hyoung Kim, Tristan Weydts, Vladimir Pejovic, Minhyun Jin, Sang Yeon Lee, Yoora Seo, Jonas Bentell, Abu Bakar Siddik, Isabel Pintor Monroy, Marina Vildanova, Arman Uz Zaman, Tae Jin Yoo, Antonia Malainou, Wagdy Hussein, Annachiara Spagnolo, Gauri Karve, Itai Lieberman, Pawel E. Malinowski
1imec, Kapeldreef 75, 3001 Leuven, Belgium

Abstract

This paper proposes a scalable SWIR sensor using monolithic thin-film photodiodes (TFPD) and introduces a lead-free SWIR image sensor based on InAs quantum dots (QD) to comply with material restrictions. The InAs QDPD is fabricated on a silicon readout wafer with a 3T pixel structure, enabling dual range. Experimental results demonstrate external quantum efficiencies of 28% at 1200 nm and 4.8% at 1400 nm, with a dynamic range of 83.5 dB. The proposed sensor exhibits reduced noise levels and no visible random telegraph signal (RTS) noise by the frame-based correlated double sampling (CDS).
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/kz3f-bsx4
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Keywords

CMOS Image Sensor, InAs, Quantum dot (QD) photodiode, Short-wavelength infrared (SWIR) sensor,

References

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