WORKSHOP PAPER
A High Optical Performance 2.8µm BSI LOFIC Pixel with 120ke- FWC and 160 µV/e- Conversion Gain
Ken Miyauchi1, Shunsuke Okura1, Kazuya Mori1, Isao Takayanagi1, Junichi Nakamura1, Shigetoshi Sugawa2
1Brillnics Japan Inc., 6 -21-12 Minami -Oi, Shinagawa -ku, Tokyo, 140 -0013 Japan
2Graduate School of Engineering, TohokuUniversity, 6 -6-11-811, Aza-Aoba, Aramaki, Aoba -ku, Sendai, Miyagi, 980-8579 Japan

Abstract

In this paper, we report about a prototype CMOS image sensor with a 2.8µm back side illuminated (BSI) pixel that employs the lateral overflow integration capacitor (LOFIC) to further expand dynamic range of our reported sensors. Full well capacity of 120ke- and conversion gain of 160µV/e- have been achieved. For high optical performance with the BSI structure, an n-layer of the deep photodiode under LOFIC is formed. Owing to this structure, 70% peak quantum efficiency and 91% angular response at ±20 degrees have been achieved without blooming.
Publisher: IISS (Int. Image Sensors Society)
Year: 2019
Workshop: IISW
URL: https://doi.org/10.60928/lpsb-tydr
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Keywords

BSI LOFIC Pixel, Dynamic Range, Optical Performance,

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