WORKSHOP PAPER
New Source of Random Telegraph Signal in CMOS Image Sensors
V. Goiffon1, P. Magnan1, P. Martin-Gonthier1, C. Virmontois1, M. Gaillardin2
1Université de Toulouse, ISAE, Toulouse F-31055, France
2CEA DAM, DIF, F-91297 Arpajon, France

Abstract

This paper presents a new source of Random Telegraph Signal (RTS) due to meta-stable Shockley-Read-Hall (SRH) generation mechanism at depleted oxide interfaces in CMOS Image Sensors (CIS). The study investigates the nature of RTS, distinguishing between those caused by MOSFET conductance fluctuations (MOSFET-RTS) and those caused by discrete variations in the photodiode Dark Current (DC), termed DC-RTS. It identifies the STI depleted interfaces as the primary origin of the newly observed DC-RTSs, which significantly increase with exposure to ionizing radiation. This finding has implications for the operation of CISs in ionizing environments and may help in understanding similar RTS behavior in other devices.
Publisher: IISS (Int. Image Sensors Society)
Year: 2011
Workshop: IISW
URL: https://doi.org/10.60928/ltho-uev9
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Keywords

CMOS Image Sensors, Random Telegraph Signal, Dark Current,

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