WORKSHOP PAPER
A 1.75-µm square pixel IT-CCD having a gate oxide insulator composed by a single-layer electrode structure
Abstract
We have introduced a gate oxide insulator into an interline transfer CCD (IT-CCD) image sensor by using a single-layer electrode structure. We confirmed that the charge transfer function was not degraded in this structure when subjected to a high electric field, in contrast with conventional gate oxide-nitride-oxide (ONO) structures. We adapted this newly developed structure to a 1.75-µm square pixel IT-CCD image sensor with 8M pixels of 1/2.5-type image format and evaluated its device performance.Keywords
IT-CCD, gate oxide insulator, 1.75-µm square pixel,References
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