WORKSHOP PAPER
Reduction of Band-to-band Tunneling in Deep-submicron CMOS Single Photon Avalanche Photodiodes
Abstract
We demonstrate that a process layer intended for pinned-photodiode formation can be employed to reduce the dark count rate (DCR) of single photon avalanche diodes (SPADs) in nanometer-era CMOS technologies. A low-doped p-type passivation implant reduces the electric field in the p-diffusion/nwell breakdown region and acts both as a guard ring and as an STI edge interface. An 8mm diameter device with a typical DCR of 40Hz at 25C is reported in a 130nm CMOS imaging process.Keywords
Single Photon Avalanche Diodes, CMOS Technology, Band-to-band Tunneling,References
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