WORKSHOP PAPER
A 305ns Conversion-Time, 13-bit All-Digital Column Analog-to-Digital Converter for CMOS Image Sensors in 180nm Technology
Ha Le-Thai1, Adi Xhakoni1, Genis Chapinal2, Manuel Innocent2, Tomas Geurts2, Georges Gielen1
1KU Leuven, ESAT-MICAS, Kasteelpark Arenberg 10, Room B02.26, Heverlee 1 B-3001 Belgium
2ON Semiconductor, Mechelen, Belgium

Abstract

A new analog-to-digital converter for CMOS image sensors is proposed which utilizes multiple parallel shifted ramps and a noise-shaping gated ring oscillator (GRO). This architecture is aimed at combining high-speed, low-noise and low-power performances, simultaneously with simple and uniform global single-slope ramps. The high speed performance is achieved by the phase-delay counting of the GRO and the overlapping shift of the ramps. In order to achieve low noise, multiple single-slope ramps are applied at the comparator input to average the input noise, and a local GRO, whose phases can be memorized, is placed at the digital backend to achieve a 1st-order quantization error shaping. For 13-bit resolution, the total conversion time is 305ns in 180nm CMOS technology. Since the proposed A/D converter is mostly composed of digital circuits, it can be considered as an all-digital approach which owns better performances in more scaled CMOS technologies.
Publisher: IISS (Int. Image Sensors Society)
Year: 2015
Workshop: IISW
URL: https://doi.org/10.60928/mnod-d95k

Keywords

Analog-to-digital converter, CMOS image sensors, Noise-shaping gated ring oscillator,

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