WORKSHOP PAPER
Front- / Backside Illuminated Low Noise Embedded CCD image sensor with Multi Level Anti Blooming functionality
Abstract
This paper presents a 320 columns x 128 lines Time Delay and Integration (TDI) image sensor with an embedded charge-coupled device (eCCD) structure fabricated in a 0.35 µm high voltage CMOS process. The paper focuses on the noise characteristics of the sensor analog readout chain and presents an analytical model for effective noise reduction down to an equivalent input noise (ENC) of 20 e-. The TDI sensor utilizes bidirectional charge shifting and additional excess charge draining by the pixel reset transistor. These techniques provide an effective anti blooming capability, which together with the optimized noise characteristics offers a dynamic range of 13 bit.Keywords
noise, conversion gain, correlated double sampling, time-delayed integration, charge-coupled device, responsivity, photon transfer curve, signal-to-noise ratio, blooming, backside illumination, frontside illumination,References
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