WORKSHOP PAPER
A High Optical Performance 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Light Guide Structure
Abstract
We describe a high optical performance 3.4 μm pixel pitch global shutter CMOS image sensor with multiple accumulation shutter technology and a large tapered light guide structure. The pixel achieves 1.8 e- temporal noise and full well capacity of 16,200 e- with charge domain memory in 120 fps operation. The sensitivity and parasitic light sensitivity are 28,000 e-/lx·s and -89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity has been improved by the large tapered light guide structure.Keywords
Global Shutter CMOS Image Sensor, Light Guide Structure, Multiple Accumulation Shutter Technology,References
1) H. Totsuka, et al., "An APS-H size 250Mpixel CMOS Image Sensor using Column Single Slope ADCs with Dual Gain Amplifiers", ISSCC Dig. Tech. Papers, 2016. https://doi.org/10.1109/isscc.2016.7417934
2) M. Kobayashi et al., "A 1.8e-rms Temporal Noise Over 110dB Dynamic Range 3.4μm Pixel Pitch Global Shutter CMOS Image Sensor with Dual-Gain Amplifiers SS-ADC and Multiple Accumulation Shutter", ISSCC Dig Tech Papers, 2017. https://doi.org/10.1109/isscc.2017.7870267
3) K. Kawabata et al., "A 1.8e- Temporal Noise Over 90dB Dynamic Range 4k2k Super 35mm format Seamless Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter Technology", IEDM, 2016. https://doi.org/10.1109/iedm.2016.7838377
4) Y. Oike, et al., "An 8.3M-pixel 480fps Global-Shutter CMOS Image Sensor with Gain-Adaptive Column ADCs and 2-on-1 Stacked Device Structure", IEEE Symp. on VLSI Circuits, 2016. https://doi.org/10.1109/vlsic.2016.7573543
5) P. Centen et al., "A 4e-noise 2/3-inch Global Shutter 1920x1080P120 CMOS-Imager", Proc. of IISW, 2013. https://doi.org/10.60928/0loz-zula