Abstract

This work introduces a high-performing germanium-silicon (GeSi) single-photon avalanche diode (SPAD) operating efficiently at room and elevated temperatures, characterized by a breakdown voltage (BV) under 12 V. The device showcases a dark count rate (DCR) and single-photon detection probability (SPDP) of approximately 10 kHz/µm2 and ~10% respectively, at an excess bias (EB) of 0.5 V from a device with a 15 µm diameter active area. The paper demonstrates the capability of this GeSi SPAD in conjunction with associated technologies for time-of-flight (TOF) sensing, highlighting its potential applications in various research fields including optical quantum information processing and LiDAR. The significant advancement represents a step forward in the commercial viability of SWIR sensors and imagers for consumer applications.