WORKSHOP PAPER
Avalanche detectors in 110nm CMOS for high-energy radiation imaging and sub-nanosecond timing
Lucio Pancheri1,2,3,4,5,6, Jacopo Endrizzi1,2, Thomas Corradino3, Umberto Follo4,6, Giulia Gioachin5,6, Chiara Ferrero4,6, Marco Mandurrino6, Manuel Da Rocha Rolo6, Stefania Bufalino5,6, Angelo Rivetti6
1DII, Università di Trento, Trento, Italy
2TIFPA-INFN, Trento, Italy
3FBK, Trento, Italy
4DET, Politecnico di Torino, Torino, Italy
5DISAT, Politecnico di Torino, Torino, Italy
6INFN Torino, Torino, Italy

Abstract

This contribution presents avalanche detectors fabricated in a customized 110nm CMOS process for high-energy radiation imaging applications. The devices, operating at low gain in sub-Geiger mode, can be integrated in arrays, and provide charge collection and avalanche multiplication for charge generated in the whole pixel volume. The structure of test devices having an active thickness of 48μm is presented, along with a summary of key electrical and functional characterization results.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/ohf0-vcp4
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Keywords

Avalanche detectors, 110nm CMOS, high-energy radiation imaging, sub-nanosecond timing,

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