WORKSHOP PAPER
A 7-band CCD-in-CMOS multispectral TDI imager
Abstract
We have developed a TDI sensor with 7 bands of 256 rows each using imec's CCD-in-CMOS technology. Each band uses individual on-chip sequencers and CCD drivers for the 5.4 µm four-phase TDI pixels. Line-by-line row selection per band, individual band selection and bi-directionality enable multispectral TDI. CCD bands operate continuously and time interleaved, and top or bottom outputs can be connected to shared column-parallel delta-sigma ADCs through a column line. ADC outputs are serialized to 32 1.2V LVDS outputs along with two clock signals. These outputs are capable of running at an aggregate of >50Gb/s using on-chip PLLs.Keywords
TDI sensor, multispectral, CCD-in-CMOS technology,References
1) K. Nie, et al., "A 128-Stage CMOS TDI Image Sensor with on-chip Digital Accumulator", IEEE Sensor Journal, 2016. https://doi.org/10.1109/jsen.2015.2499743
2) G. Lepage, et al., "Time Delay Integration Architectures in CMOS Image Sensors", IEEE Transactions on Electron Devices, 2009. https://doi.org/10.1109/ted.2009.2030648
3) F. Mayer, et al., "CMOS Charge Transfer TDI With Front Side Enhanced Quantum efficiency", IISS, 2015. https://doi.org/10.60928/yor6-vulu
4) A. Ercan, et al, "A TDI Test Imager in Embedded CCD in CMOS Technology", CNES workshop, 2013
5) C. Ma, et al, "A 4MP high dynamic range, low noise CMOS image sensor", Proc. SPIE9703, Image Sensors and Imaging Systems. https://doi.org/10.1117/12.2083085