WORKSHOP PAPER
A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response
Satoshi Nasuno1, Shunichi Wakashima1, Fumiaki Kusuhara1, Rihito Kuroda1, Shigetoshi Sugawa1
1Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, Japan 980-8579

Abstract

In this paper, the structure and the performances of a CMOS image sensor with high conversion gain (CG): 240 μV/e-, high full well capacity (FWC): 200 ke-, wide spectral response: 190-1000 nm and high robustness to ultraviolet (UV) light are described. The developed CMOS image sensor was fabricated by introducing the following key technologies; small capacitance floating diffusion (FD) structure with lateral overflow integration capacitor (LOFIC) for pixel and a thin surface high concentration p+ layer with steep dopant profile for photodiode.
Publisher: IISS (Int. Image Sensors Society)
Year: 2015
Workshop: IISW
URL: https://doi.org/10.60928/qqd9-nh4d
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Keywords

CMOS image sensor, conversion gain, spectral response,

References

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