WORKSHOP PAPER
A Simple Monte Carlo Transport and Multiplication Simulation Method for the Analysis of a SPAD with a Spherically Uniform Electric Field Peak
Abstract
A Monte Carlo simulation method for the transport and multiplication of carriers in electric fields is presented, focusing on the stochastic scattering and free flight of electrons and holes in silicon. The technique employs a nonparabolic single-band model for energy dispersion, considering phonon scattering and impact ionization scattering, to estimate the photon detection efficiency, temporal response, noise, and crosstalk of a near-infrared enhanced single-photon avalanche diode (SPAD) with a spherically uniform electric field peak.Keywords
Monte Carlo Simulation, SPAD, Electron and Hole Scattering,References
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