Abstract

A new pixel design using pinned photodiode (PPD) in a 180 nm CMOS image sensor (CIS) process has been developed as a proof of principle. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the in-pixel p-wells have been added to the manufacturing process in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The new design exhibits nearly identical electro-optical performance under reverse bias as the reference PPD pixel it is based on, and the leakage current is effectively suppressed. The characterisation results from both front- and back-side illuminated sensor variants show that the epitaxial layer is fully depleted.