WORKSHOP PAPER
World smallest 200Mp CMOS Image Sensor with 0.56μm pixel equipped with novel Deep Trench Isolation structure for better sensitivity and higher CG
Sungsoo Choi1, Seungjoon Lee2, Changhyo Koo3, Seungjoo Nah4, Jae Ho Kim3, Others1,2
1Semiconductor R&D Center, Samsung Electronics, Hwasung -City, Kyunggi -do, 18448, Republic of Korea
2System LSI Division, Samsung Electronics, Hwasung -City, Kyunggi -do, 184 48, Republic of Korea
3CSE team, Samsung Electronics, Hwasung -City, Kyunggi -do, 18448, Republic of Korea
4Foundry Division, Samsung Electronics, Hwasung -City, Kyunggi -do, 184 48, Republic of Korea

Abstract

We present the world smallest 200 megapixel (MP) CMOS Image Sensor equipped with newly developed 0.56μm pixel. The sensor leverages a 2x4 shared pixel structure with a novel deep trench isolation (DTI) to minimize light absorption from polysilicon and dark current, thereby improving the relative quantum efficiency by 14%. The new DTI structure also boosts the conversion gain (CG) by 38%. Process optimization further enhances CG by an additional 14%.
Publisher: IISS (Int. Image Sensors Society)
Year: 2023
Workshop: IISW
URL: https://doi.org/10.60928/sel5-hn0e
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Keywords

CMOS Image Sensor, Deep Trench Isolation, Conversion Gain,

References

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