WORKSHOP PAPER
Analysis of Source Follower Random Telegraph Signal Using nMOS and pMOS Array TEG
Kenichi Abe1, Shigetoshi Sugawa1, Rihito Kuroda1,2, Shunichi Watabe1, Naoto Miyamoto3, Akinobu Teramoto3, Tadahiro Ohmi3, Yutaka Kamata4, Katsuhiko Shibusawa4
1Graduate School of Engineering, Tohoku University, 6-6-10, Aza-Aoba Aramaki Aoba, Sendai, 980-8579, Japan
2JSPS Research Fellow (DC1),
3New Industry Creation Hatchery Center, Tohoku University,
4Miyagi Oki Electric. Co., Ltd.,

Abstract

In this work, Random Telegraph Signal (RTS) in source follower circuits is studied using an advanced TEG including dependency on MOSFETs carrier type, gate size and operation bias conditions. Appearance probabilities and noise intensities of RTS for pMOSFETs are shown to be less problematic than these of nMOSFETs for various gate sizes and bias conditions.
Publisher: IISS (Int. Image Sensors Society)
Year: 2007
Workshop: IISW
URL: https://doi.org/10.60928/svec-sish
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Keywords

Random Telegraph Signal, Source Follower, MOSFET,

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