WORKSHOP PAPER
Low Dark Current UV-VIS Planar- electrode Perovskite CMOS Image Sensor
Yan-Rung Lin1, Pei-Wen Yen1, Sheng-Min Yu1, Shiu-Cheng Lou1, Kai-Ping Chuang1, Bor-Nian Chuang1, Yen-Chih Chiou2, Chih-Cheng Hsieh2, Cheng-Hung Hou3, Feng-Yu Tsai3
1Industrial Technology Research Institute, Center for Measurement Standards, Hsinchu, Taiwan
2National Tsing Hua University, Department of Electrical Engineering, Hsinchu, Taiwan
3National Taiwan University, Department of Materials Science and Engineering, Taipei, Taiwan

Abstract

We proposed a planar-electrode structure hybrid CIS (CMOS image sensor) with a thin organic-inorganic perovskite layer as a photoactive material achieving a low dark current ranging from 2 pA/cm2 at 0.2 V to 10 nA/cm2 at 2V by the aid of titanium dioxide (TiO2) layer between the electrode aluminum (Al) and perovskite (PVSK) film. More than 1000% external quantum efficiency (EQE) was observed in the planar-electrode photodetector structure in which Al electrodes capped with titanium nitride (TiN). The PVSK photodetectors have a high photoconductive gain, broad spectral response, low temperature process and simple structure, demonstrating a possibility of using the hybrid active layer perovskite for UV enhanced and next generation sensor.
Publisher: IISS (Int. Image Sensors Society)
Year: 2017
Workshop: IISW
URL: https://doi.org/10.60928/tuc2-eoz1
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Keywords

CMOS image sensor, perovskite, external quantum efficiency (EQE),

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