WORKSHOP PAPER
Gamma-Ray Irradiation Effects on CMOS Image Sensors in Deep Sub-Micron Technology
Padmakumar R. Rao1, Xinyang Wang1, Adri J. Mierop1,2, Albert J.P. Theuwissen1,2
1Electronic Instrumentation Laboratory, Delft University of Technology, Delft, the Netherlands
2DALSA, Eindhoven, the Netherlands

Abstract

CMOS Image Sensors are crucial for applications requiring detection of minimal signals, where radiation tolerance is essential. This study focuses on ionization and displacement damages from gamma-ray irradiation, investigating their effects on sensor performance in deep sub-micron technology. Experimentation with 'pinned' CMOS photodiodes and various structural modifications reveals significant insights into optimization for radiation-hardened designs.
Publisher: IISS (Int. Image Sensors Society)
Year: 2007
Workshop: IISW
URL: https://doi.org/10.60928/ujbt-6sd7
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Keywords

CMOS Image Sensors, Gamma-Ray Irradiation, Radiation Tolerance,

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