WORKSHOP PAPER
Random Telegraph Noise Caused by MOSFET Channel Traps and Variable Gate Induced Leakage with Multiple Sampling Readout
Abstract
A study of the effect of correlated double sampling (CDS) and multiple sampling (MS) readout for random telegraph noise (RTN) is presented in this work. A 3-transistor, 1300 x 800 test cell array fabricated in 40 nm low power technology is developed to investigate MOSFET channel RTN and the RTN due to variable gate induced leakage (or GIDL RTN). All transistors in the test cell array are standard I/O devices. In CDS operation, GIDL-RTN near the reset gate-edge is primarily responsible for most of the DUTs in the RTN long tail of inverse cumulative distribution function (ICDF) distribution. The GIDL-RTN can be improved by increasing RSTL voltage. When RSTL is increased to 1.2 V, the main RTN source becomes the source-follower (SF) channel RTN. In MS operation, it is found that MS readout has no effect on GIDL-RTN. In MS operation, the RTN amplitude ratio between main and side peaks is about half, compared to that of the CDS operation. A simple circuit model is used to explain this result. The SF–channel RTN can be reduced by MS operation.Keywords
Random telegraph noise (RTN), correlated double sampling (CDS), multiple sampling (MS), Gate induced drain leakage (GIDL),References
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