WORKSHOP PAPER
Dark-Current Random Telegraph Signal in InGaAs Image Sensor for SWIR domain
M. Benfante1, C. Durnez2, V. Lalucaa2, A. Rouvie2, A. Le Roch2, C. Virmontois2
1Expleo France, Toulouse, 31300, France
2Centre National d’Etudes Spatiales (CNES), Toulouse, 31000, France

Abstract

The Dark Current Random Telegraph Signal is observed and investigated in small pitch InGaAs-based SWIR image sensors. This phenomenon corresponds to dark signal fluctuation and is related to blinking pixels. It is a major issue in image sensors because of the random behavior which is impossible to calibrate. In this work, the readout noise, the dark current and the DC-RTS are studied in two commercial of the shelf InGaAs image sensor formats.
Year: 2025
Workshop: IISW
URL: https://doi.org/10.60928/w05w-qedl

Keywords

Infrared, SWIR, InGaAs image sensor, Dark Current Random Telegraph Signal, noise, blinking pixel,

References

[1]) D. Herve et al., "SPOT 4’s HRVIR and Vegetation SWIR cameras", Proc. Infrared Technology XXI, SPIE 2552, 1995. https://doi.org/10.1117/12.218284
[2]) O. Gilard et al., "Damage Factor for Radiation-Induced Dark Current in InGaAs Photodiodes", IEEE Transactions on Nuclear Science, vol. 65, no. 3, 2018. https://doi.org/10.1109/TNS.2018.2799742
[3]) V. Lalucaa, L. Calvinhac, and C. Virmontois, "Dark Current Random Telegraph Signal in visible and SWIR Direct Cu-Cu bonding InGaAs Image Sensor", 2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Vienna, Austria, 2021. https://doi.org/10.1109/radecs53308.2021.9954480
[4]) C. Virmontois et al., "Dark Current Random Telegraph Signals in InGaAs image sensors based on InGaAs", IEEE Transactions on Nuclear Science, vol. 68, no. 5, 2021. https://doi.org/10.1109/TNS.2021.3074052
[5]) I. H. Hopkins and G. R. Hopkinson, "Random telegraph signals from proton-irradiated CCDs", IEEE Trans. Nucl. Sci., 1993. https://doi.org/10.1109/23.273552
[6]) I. H. Hopkins and G. R. Hopkinson, "Further measurements of random telegraph signals in proton-irradiated CCDs", IEEE Trans. Nucl. Sci., 1995. https://doi.org/10.1109/23.489255
[7]) G. R. Hopkinson, "Radiation effects in a CMOS active pixel sensor", IEEE Trans. Nucl. Sci., 2000. https://doi.org/10.1109/23.903796
[8]) G. R. Hopkinson, R. H. Sorenson, B. Leone, R. Meynart, A. Mohammadzadeh, and W. Rabaud, "Radiation effects in InGaAs and microbolometer infrared sensor arrays for space applications", IEEE Trans. Nucl. Sci., 2008. https://doi.org/10.1109/tns.2008.2006170
[9]) C. Virmontois, V. Goiffon, M. S. Robbins, L. Tauziède, H. Geoffray, M. Raine, S. Girard, O. Gilard, P. Magnan, and A. Bardoux, "Dark current random telegraph signals in solid-state image sensors", IEEE Trans. Nucl. Sci., 2013. https://doi.org/10.1109/tns.2013.2290236
[10]) S. Manda, R. Matsumoto, S. Saito, S. Maruyama, H. Minari, T. Hirano, T. Takachi, N. Fujii, Y. Yamamoto, Y. Zaizen, et al., "High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer", 2019 IEEE International Electron Devices Meeting (IEDM), 2019. https://doi.org/10.1109/iedm19573.2019.8993432
[11]) M. Benfante, "Radiation effects on InGaAs infrared detectors", PhD thesis, 2024
[12]) V. Goiffon, G. R. Hopkinson, P. Magnan, F. Bernard, G. Rolland, and O. Saint-Pe, "Multilevel RTS in Proton Irradiated CMOS Image Sensors Manufactured in a Deep Submicron Technology", IEEE Trans. on Nucl. Sci., 2009. https://doi.org/10.1109/tns.2009.2014759
[13]) C. Durnez, V. Goiffon, C. Virmontois, P. Magnan, and L. Rubaldo, "Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays", IEEE Trans. Elect. Dev., vol. 67, no. 11, 2020. https://doi.org/10.1109/ted.2020.3022336