WORKSHOP PAPER
185 MHz Count Rate, 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology
Andreas Eisele1,2, Robert Henderson3,4, Bernd Schmidtke2, Tobias Funk2, Lindsay Grant5, Justin Richardson3,4, Wolfgang Freude1,6
1Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany
2Robert Bosch GmbH, Max-Lang-Strasse 40-46, 70771 Leinfelden, Germany
3The University of Edinburgh, Institute for Integrated Micro and Nano Systems, Edinburgh, U.K.
4Dialog Semiconductor (UK) Ltd.,
5STMicroelectronics Imaging Division, 33 Pinkhill, Edinburgh, UK, EH12 7BF
6Institute of Microstructure Technology (IMT), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany

Abstract

Single-photon avalanche diodes with active and passive quenching circuits are fabricated on a 130 nm CMOS platform and analyzed with respect to saturation behavior at high photon rates.
Publisher: IISS (Int. Image Sensors Society)
Year: 2011
Workshop: IISW
URL: https://doi.org/10.60928/w126-7olb
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Keywords

Single-photon avalanche diodes, CMOS Technology, Dynamic Range,

References

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