WORKSHOP PAPER
High Throughput, High Yield Fabrication of High Quantum Efficiency Back-illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays
Shouleh Nikzad1, M. E. Hoenk1, A. G. Carver1, T.J. Jones1, F. Greer1, E. Hamden2, T. Goodsall1
1Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
2Columbia University, New York, NY 10025

Abstract

This paper discusses the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications, presenting results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. Improvements in QE by nearly an order of magnitude over microchannel plates (MCPs) are achieved through precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).
Publisher: IISS (Int. Image Sensors Society)
Year: 2013
Workshop: IISW
URL: https://doi.org/10.60928/w1gn-dxe5

Keywords

Quantum Efficiency, Photon Counting, Delta-doped,

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