WORKSHOP PAPER
A 61mmx63mm, 16Million pixels, 40 frames per second, radiation-hard CMOS Image Sensor for Transmission Electron Microscopy
N. Guerrini1, R. Turchetta1, G. Van Hoften2, A. R. Faruqi3, G. McMullan3, R. Henderson3
1Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, U.K
2FEI, Achtseweg Noord 5, Bldg 5651 GG Eindhoven, The Netherlands
3MRC Laboratory of Molecular Biology, Hills Road, Cambridge, U.K

Abstract

The document presents the design and experimental characterization of a 16 million pixel CMOS image sensor specifically designed for direct detection of electrons in a transmission electron microscope (TEM) camera. Addressing the limitations of current imaging sensors in TEM, which are mainly film and CCD, the paper elaborates on the promise of CMOS image sensors used in direct detection that offer better sensitivity and spatial resolution. The sensor supports region of interest readout, stitching for larger sensor construction, and operates at -20 degrees Celsius in the vacuum of an electron microscope.
Publisher: IISS (Int. Image Sensors Society)
Year: 2011
Workshop: IISW
URL: https://doi.org/10.60928/wbik-g967
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Keywords

CMOS Image Sensor, Transmission Electron Microscopy, Radiation Hard,

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