WORKSHOP PAPER
A Burst Mode 20 Mfps Low Noise CMOS Image Sensor
Xin Yue1, Eric R. Fossum1
1Thayer School of Engineering, Dartmouth College, Hanover, NH, USA

Abstract

This paper presents an ultra-high-speed CMOS image sensor utilizing charge-sweep transfer gate technology. This technology eliminates the need for advanced process customization and enables total noise reduction by optimizing the pixel conversion gain. A test chip with a resolution of 64 by 64 was implemented in a standard 180 nm process and characterized, demonstrating agreement with theoretical analysis and simulation.
Publisher: IISS (Int. Image Sensors Society)
Year: 2023
Workshop: IISW
URL: https://doi.org/10.60928/wcsz-bogi

Keywords

CMOS image sensor, charge-sweep transfer gate, low noise,

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