WORKSHOP PAPER
Identifying the Sources of Random Telegraph Noises in Pixels of CMOS Image Sensors
Calvin Yi-Ping Chao1, Meng-Hsu Wu1, Shang-Fu Yeh1, Kuo-Yu Chou1, Honyih Tu1, Chi-Lin Lee1, Yin Chin1, Philippe Paillet2, Vincent Goiffon3
1Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan, ROC
2CEA, DAM, DIF, Arpajon, France
3ISAE-SUPAERO, Université de Toulouse, Toulouse, France

Abstract

This paper focuses on identifying the different types of Random Telegraph Noises (RTN) in CMOS Image Sensors (CIS) both before and after X-ray irradiation. The aim is to explore the different sources of RTN in CIS and understand how X-ray irradiation affects the RTN composition, providing insights into process-induced damage (PID) in CIS fabrication.
Publisher: IISS (Int. Image Sensors Society)
Year: 2019
Workshop: IISW
URL: https://doi.org/10.60928/wepg-fu0s
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Keywords

Random Telegraph Noise, CMOS Image Sensors, X-ray irradiation,

References

1) E. Simoen and C. Claeys, "Random Telegraph Signals in Semiconductor Devices", IOP Publishing, 2016. https://doi.org/10.1088/978-0-7503-1272-1
2) C. Y.-P. Chao et al., "J-EDS", 2017
3) C. Y.-P. Chao et al., "IISW 2017", 2017
4) C. Y.-P. Chao et al., "Sensors 17, no. 2", 2017
5) C. Y.-P. Chao et al., "J-EDS", 2019
6) S.-F. Yeh et al., "IISW 2019 (this proceeding)", 2019