WORKSHOP PAPER
Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode with Atomically Flat Si Surface
Rihito Kuroda1, Taiki Nakazawa1, Katsuhiko Hanzawa1, Shigetoshi Sugawa1
1Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, Japan 980-8579

Abstract

This work presents a highly Ultraviolet (UV) light sensitive and reliable Front Side Illumination (FSI)-photodiode, utilizing an atomically flat Si surface for uniform thin surface drift layer formation, achieving nearly 100% internal Quantum Efficiency (Q.E.) across UV-Visible-Near-IR light spectrum. The developed photodiode process aligns with current manufacturing processes for FSI-photodiodes, arrayed sensors, and image sensors.
Publisher: IISS (Int. Image Sensors Society)
Year: 2011
Workshop: IISW
URL: https://doi.org/10.60928/wq00-byxn
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Keywords

UV-light sensitivity, FSI-photodiode, Atomically flat Si surface,

References