WORKSHOP PAPER
10𝝁𝒎 Backside Illuminated SPAD cell with Novel Dielectric-Filled DTI Scheme for optical Isolation
Abstract
We present a 10.5µm back-side illuminated 3D-stacked single-photon avalanche diode (SPAD) sensor with reduced crosstalk and improved photon detection efficiency (PDE) performance. To minimize crosstalk, we employ an innovative double Deep Trench Isolation (DTI) solution. Enhanced PDE is achieved by optimizing the SPAD implant process to focus the generated carriers from the entire pixel volume into the high field avalanche region near the SPAD junction.Keywords
SPAD, Crosstalk, PDE, DTI,References
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