WORKSHOP PAPER
Backside illuminated 84 dB global shutter image sensor
Abstract
We present a backside thinned CMOS active pixel image sensor with 20x20 µm2 global shutter pixels. The sensor employs a dual gain global shutter pixel, resulting in a dynamic range exceeding 84 dB and preserving good shutter efficiency with backside thinning, developed for the European Space Agency (ESA). It features two BSI configurations for UV (270-400 nm) and visible (400-800 nm) wavelengths, utilizing an Al2O3 anti-reflective coating for backside passivation and low reflectance.Keywords
Backside thinned CMOS, Global shutter, Dual gain pixel,References
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