WORKSHOP PAPER
1/4 inch 2Mega CMOS Image Sensor Fabrication
Se Jung Oh1, Keun Hyuk Lim2, Jae Young Rim1, Chan Ki Kim1, An Sik Choi1, Do Young Lee1
1SiliconFile Technologies Inc., 10F, Yewon Bldg., 75-1, Yangjae-Dong, Seocho-Ku, Seoul 137-130, Korea
2Dong Bu Electronics,

Abstract

This paper presents the fabrication of a 1/4inch 2mega CMOS image sensor with a non-shared type 2.25um pixel with 4 transistors. A borderless contact technique is utilized to connect the driver transistor and the floating diffusion, ensuring optical fill factor for incident light and facilitating a similar fill factor with shared type pixels for the 2.25um pixel. The design and performance including 34% fill factor, 550mv saturation level, and 10mV/sec dark current level are discussed.
Publisher: IISS (Int. Image Sensors Society)
Year: 2007
Workshop: IISW
URL: https://doi.org/10.60928/yt99-gxs5
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Keywords

CMOS image sensor, borderless contact, fill factor,

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