2015 INTERNATIONAL IMAGE SENSOR WORKSHOP


Monday, June 8th  2015- AM

Introductory paper:

The State-of-the-Art of Mainstream CMOS Image Sensors
Ray Fontaine
Competitive Technical Intelligence Group, Chipworks, Inc., Canada

Session 01  Image Sensors for Digital Photography
Session Chair: Eric Stevens

Back-side illuminated 28M-pixel APS-C sensor with high performance
Sungsoo Choi, Seung Hyun Lim, Moosup Lim, Hyung Jin Bae, Kyo Jin Choo, Jung Hoon Park, Kang Sun Lee, Seung Sik Kim, Jungho Moon, Kyungmok Son, Eun Sub Shim, Hankook Cho, Yitae Kim, Seog Heon Ham,JungChak Ahn, Chang Rok Moon and Duckhyung Lee

Samsung Electronics, System LSI Division , Gyeonggi-city, Gyeonggi-do, Korea

A Low Noise and High Sensitivity Image Sensor with Imaging and Phase-Difference Detection AF in All Pixels
M.Kobayashi, M.Johnson, Y.Wada, H.Tsuboi, J.Iwata, T.Ono, H.Takada, K.Togo, Y.Arishima, T.Kishi, A.Okita, H.Takahashi, T.Ichikawa

Canon Inc., Japan

A 4M pixel full-PDAF CMOS image sensor with 1.58μm 2X1 On-Chip Micro-Split-Lens technology
Sozo Yokogawa1, Isao Hirota1, Isao Ohdaira1, Masao Matsumura1, Atsushi Morimitsu1, Hiroaki Takahashi1 Toshio Yamazaki2, Hideki Oyaizu2,Yalcin Incesu3, Muhammad Atif3, Yoshikazu Nitta1  

1 Sony Corporation, Atsugi, Kanagawa, Japan
2 Sony Corporation, Osaki, Shinagawa-ku, Tokyo, Japan
3 Sony Deutschland GmbH, Stuttgart, Germany

Recent developments on large-area CCDs for professional applications
Jan Bosiers, Erik-Jan Manoury, Wilco Klaassens, Holger Stoldt, René Leenen, Harry van Kuijk, Herman Peek, Walter de Laat
Teledyne DALSA Professional Imaging
High-Tech Campus 27, 5656AE Eindhoven, The Netherlands

 

Session 02   Stacked Image Sensors
Session Chair : Vladimir Koifman

Stack Chip Technology: A New Direction for CMOS Imagers
V.C. Venezia, H. Rhodes, C. Shih, W.Z. Yang, and B. Zhang
OmniVision Technologies, Santa Clara, USA

A 3D stacked CMOS image sensor with 16Mpixel global-shutter mode using 4 million interconnections
Toru Kondo, Yoshiaki Takemoto, Kenji Kobayashi, Mitsuhiro Tsukimura, Naohiro Takazawa, Hideki Kato, Shunsuke Suzuki, Jun Aoki, Haruhisa Saito, Yuichi Gomi, Seisuke Matsuda and Yoshitaka Tadaki

Olympus Corporation Japan

A 1/1.7-inch 20Mpixel Back-illuminated Stacked CMOS Image Sensor with parallel multiple sampling
Hayato Wakabayashi1, Atsushi Suzuki1,Nobutaka Shimamura1,Toshiki Kainuma1, Kensuke Koiso3, Atsushi Masagaki1, Yoichi Yagasaki1, Shigeru Gonoi2, Masatoshi Mizuno2, Tatsuya Sugioka1,Takafumi Morikawa1, Yoshiaki Inada1

1Sony, Atsugi, Japan, 2Sony LSI Design, Atsugi, Japan, 3Sony Semiconductor, Kumamoto, Japan

A Three-Dimensional Integration Technology with Embedded Au Electrodes for stacked CMOS Image Sensors
Masahide Goto1, Kei Hagiwara1, Yoshinori Iguchi1, Hiroshi Ohtake1, Takuya Saraya2,Masaharu Kobayashi2, Eiji Higurashi2, Hiroshi Toshiyoshi2,Toshiro Hiramoto2

1 NHK Science and Technology Research Laboratories, Tokyo, Japan,
2 The University of Tokyo, Tokyo, Japan

 

Session 03  Imaging Devices, Characterization and Modeling
Session Chair: Vyshnavi Suntharalingam

Detection and Shielding of Photon Emission in Stacked CIS
Calvin Chao, Chin-Hao Chang, Manoj Mhala, Hon-Yih Tu,Shang-Fu Yeh,Kuo-Yu Chou, Po-Sheng Chou, Charles Liu, and Fu-Lung Hsueh

Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan  (Slides)


The source decomposition of Dark FPN and its improvement by Stacked CIS process
Yamashita, W.H. Wu, W.J. Chiang, C.H. Chung, R.J. Lin, J.J. Sze, J.C. Liu, C.H. Tseng, H. Sumiand S.G. Wuu

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan

Interface State Generation by Substrate Injection Through the Transfer Gate
Chris Hong1, Rick Jerome1, David Price1, Verne Hornback1, Kyle Thomas2, Rusty Winzenread2

1 ON Semiconductor, Gresham, OR, USA
2 ON Semiconductor, Santa Clara, CA, USA

Absolute Pinning Voltage Measurement: Comparison between In-pixel and JFET Extraction Methods
Pelamatti1, V. Goiffon1, A. De Ipanema1, P. Magnan1, C. Virmontois2 O. Saint-Pe3, M. Breart de Boisanger3

1 ISAE Toulouse  2CNES, Toulouse, 3Airbus Defence and Space, Toulouse, France

Fully Depleted SOI Pixel Photo Detectors with Backgate Surface Potential Pinning
Hiroki Kamehama1, Shoji Kawahito1, Sumeet Shrestha1, Keita Yasutomi1, Keiichiro Kagawa1,Aayaki Takeda2,Takeshi Go Tsuru2,and Yasuo Arai3

1Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
2Department of Physics, Kyoto University, Sakyo, Japan
3National High Energy Accelerator Research Organization, Ibaraki Japan

 

Session 04  Spectral Imaging and Microlenses
Session Chair:  Yitae Kim

Two Layer Image Sensor Pixel Concept for Enhanced Low Light Color Imaging
Leo Anzagira, Eric R. Fossum
Thayer Engineering School, Dartmouth College, Hanover, NH, USA

New Color Filter Patterns and Demosaic for Sub-micron Pixel Arrays
Biay-Cheng Hseih1, Hasib Siddiqui1, Jiafu Luo1, Todor Gerogiev1, Kalin Atanassov1, Sergio Goma1, and HY Cheng2, JJ Sze2, RJ Lin2, HY Chou2, Calvin Chao 2, SG Wuu2

1Qualcomm Inc., San Diego,CA,USA,  2TSMC,Hsinchu, Taiwan

A 80% QE High Readout Speed 1024 Pixel Linear Photodiode Array for UV-VIS-NIR Spectroscopy
Rihito Kuroda1, Takahiro Akutsu1, Yasumasa Koda1, Kenji Takubo2, Hideki Tominaga2
Ryuuta Hirose2, Tomohiro Karasawa2 and Shigetoshi Sugawa1

1Graduate School of Engineering, Tohoku University, Japan
2Shimadzu Corporation Sendai, Miyagi, Japan

Pixel performance enhancement by integrated diffractive optics
Rochus, Xavier Rottenberg, Ingrid De Wolf, Philippe Soussan, and Piet De Moor
Imec, Leuven, Belgium

 

Session 05  Poster Flash Presentations (Group 1)
Session Chair:  Gennadiy Agranov

On Chip Optics Solution on Small Pixel CIS S/N Ratio Improvement
Chih-Ching Chang, Wu-Cheng Kuo , Ken_Wu , Yu-Kun Hsiao, JC_Hsieh.
VisEra Technologies Company, Hsinchu Science Park, Taiwan

Color Filter Array Patterns Designed to Mitigate Crosstalk Effects in Small Pixel Image Sensors
Leo Anzagira and Eric R. Fossum,
Thayer Engineering School, Dartmouth College, Hanover, NH , USA

Read Noise Distribution Measurement and Modeling of CMOS Image Sensors
Boyd Fowler, Clemenz Portmann, Lele Wang and Steve Tran
Google Inc., Mountain View CA 94043 USA

Twinkling Behavior in Ultra-High-Resolution CMOS Global Shutter Pixels
Tsung-Hsun Tsai, David Marchesan, Naser Faramarzpour, Matthias Sonder, Eric Fox
Teledyne DALSA Inc., Waterloo, ON, Canada 

Electrical Characterization Method for Two Stage Transfer Global Shutter Pixels
Manuel Innocent
ON Semiconductor, Mechelen, Belgium.

CMOS Image Sensor for Multi-Aperture Optics – A 15×9 Array sensor for low z-height 720p camera modules with depth information
Harald Neubauer, Thomas Schweiger

Fraunhofer Institute for Integrated Circuits (IIS), Erlangen, Germany

Lens-free holographic imaging of microscopic objects using photonic structures and CMOS imagers
Murali Jayapala, Richard Stahl, Geert Vanmeerbeeck, Andy Lambrechts
IMEC, Leuven, Belgium

Design and Optimisation of Large 4T Pixel
Xuezhou Cao1, Daniel Gäbler2, Chris Lee1, Tee Pei Ling3, Devorah Anak Jarau3, David Kho Ching Tien3, Teo Boon Chuan3, Brendan Bold1

1,2X-FAB Semiconductor Foundries AG,1Branch Office Plymouth, Plymouth, UK, 2Erfurt, Germany
3X-FAB Sarawak Sdn. Bhd., Sarawak, Malaysia

Investigating Transfer Gate Potential Barrier by Feed-Forward Effect Measurement
Yang Xu1, Xiaoliang Ge1 Albert J.P. Theuwissen1,2
1Delft University of Technology, Delft, the Netherlands
2Harvest Imaging, Bree, Belgium

Analysis and Reduction of Floating Diffusion Capacitance Components of CMOS Image Sensor for Photon-Countable Sensitivity
Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda and Shigetoshi Sugawa

Graduate School of Engineering, Tohoku University, Japan

A 30 fps 1920 x 1080 pixel Electron Multiplying CCD Image Sensor with Per-Pixel Switchable Gain
Parks, S. Kosman, E. Nelson, N. Roberts, and S. Yaniga

ON Semiconductor , Rochester,  USA

Superlattice-doped detectors for UV through gamma-ray imaging and spectroscopy
E. Hoenk1 , J. Hennessy1 , A. D. Jewell1 , A. G. Carver1 , T. J. Jones1 , S. Nikzad1, M. McClish2 ,S. Tsur3 , G. Meynants4, J. Sgro5

1 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
2 Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA, USA
3 Applied Materials Inc., 9 Oppenheimer St., Rehovot, Israel
4 CMOSIS , Antwerp, Belgium     5 Alacron, Inc.,  Nashua, NH , USA

Investigation of Implantation Damage Recovery using Microwave Annealing for High Performance Image Sensing Devices.
Masatoshi Kimura1, Tadashi Yamaguchi2 and Takashi Kuroi1

1Technology Division, Renesas Semiconductor Manufacturing Corp., Japan
2Production Technology Development Unit, Renesas Electronics Corp., Japan

The Delamination Defect Improvement of High Transmittance Dielectric (HTD) Film on BSI Image Sensor Manufacturing
Sung-Han Tsai, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Li, Hsin-Chi Chen, Yung-Lung Hsu

Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan

Active Pixel Concepts for High-Resolution Large Area Imagers
Florian De Roose1,2, Soeren Steudely2, Pawel E. Malinowskiy2, Kris Myny2, Adi Xhakoni1,Georges Gielen1,2, Jan Genoey1,2, Wim Dehaene1,2

1Department of Electrical Engineering (ESAT), KU Leuven, Belgium
2Large Area Electronics Department, IMEC, Belgium

High-density 3D interconnects Technology: The key for burst-mode very high speed imaging?
Philippe Martin-Gonthier, Fernando Raymundo, Pierre Magnan
ISAE, Toulouse, France

CMOS image sensor with pseudorandom pixel placement for jaggy reduction in line representation
Chihiro Izaki, Junichi Akita
Kanazawa University, Kanazawa, Japan  (Slides)

A Dual-Mode CMOS Imager for Free-Space Optical Communication with Signal Light Source Tracking and Background Cancellation
Chih-Hao Lin, Chih-Cheng Hsieh
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan

Imaging sparse events at high speed
Gaozhan Cai, Bart Dierickx, Bert Luyssaert, Nick Witvrouwen, Gerlinde Ruttens
Caeleste CVBA, Mechelen, Belgium

 

Tuesday, June 9th  2015

Session 06  High speed, Gated and Time-Of-Flight Imaging
Session Chair:  Guy Meynants

Notes about the limits of ultra-high speed solid-state imagers
Turchetta

Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, U.K.  (Slides)

Toward 10 Gfps: Factors Limiting the Frame Rate of the BSI MCG Image Sensor
T. S. Dao1,6, T. G. Etoh1, K. Shimonomura1, Q. Nguyen1, N. Hayashi2, Y. Kamakura3, C. Zhang4, E. Charbon4, P. Goetschalckx5, Luc Haspeslagh5, and P. De Moor5

1Ritsumeikan University Kusatsu Japan, 2Astrodesign Inc., 3Osaka University, 4Technical University Delft, 5IMEC, 6Research Institute for Science and Technology, Ritsumeikan University, Kusatsu JAPAN

A 20Mfps Global Shutter CMOS Image Sensor with Improved Sensitivity and Power Consumption
Shigetoshi Sugawa, Rihito Kuroda, Tohru Takeda, Fan Shao, Ken Miyauchi and Yasuhisa Tochigi

Graduate School of Engineering, Tohoku University, Japan

Oversampled ITOF Imaging Techniques using SPAD-based Quanta Image Sensors
Neale A.W. Dutton1,2, Luca Parmesan1,2, Salvatore Gnecchi1,2, Istvan Gyongy2, Neil Calder2, Bruce R. Rae1, Lindsay A. Grant1, Robert K. Henderson2

1STMicroelectronics, Imaging Division,  Edinburgh, UK
2The University of Edinburgh, Edinburgh, UK

A High QE, Fast Shuttered CMOS Image Sensor with a Vertical Overflow Drain Shutter Mechanism
Erez Tadmor1,3 , Assaf Lahav2, Alex Fish3, Giora Yahav1, David Cohen1

1Advanced Imaging Technologies Group, Microsoft R&D Center, Haifa, Israel
2Tower-Jazz Semiconductor Ltd. Migdal Haemek, Israel
3Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel

A multi-aperture compressive time-of-flight CMOS imager for pixelwise coarse histogram acquisition
Futa Mochizuki1, Keiichiro Kagawa1, Min-Woong Seo1, Taishi Takasawa1,Keita Yasutomi1, and Shoji Kawahito1

1Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan

 

Keynote presentation:
History of the creation of MOS vision sensor arrays and associated topics 

And what does – or should – the future hold?
Peter JW Noble
2015 IISS Pioneering Achievement Award recipient.

 

Session 07  Poster Flash Presentations (Group 2)
Session Chair:  Shoji Kawahito

Designing pixel parallel localized drivers of a 3D 1Gfps image sensor family
Zhang1 V. T. S. Dao2, T. G. Etoh2, K. Shimonomura2, E. Charbon1

1Delft University of Technology, the Netherlands; 2Ritsumeikan University, Japan

A 25 Mpixel, 80fps, CMOS Imager with an In-Pixel-CDS Global Shutter Pixel
Tomas Geurts, Thomas Cools, Cedric Esquenet, Rahul Sankhe, Anilkumar Prathipati, Mukesh Rao Engla Syam, Aniruddha Bangalore Dayalu, V. Penchala Reddy Gaddam
ON Semiconductor, Belgium

A 14-bit, 33-Mpixel, 120-fps Image Sensor with DMOS Capacitors in 90-nm/65-nm CMOS
Yasue1, K. Kitamura1, T. Watabe2, H. Shimamoto1, T. Kosugi3, T. Watanabe3,S. Aoyama3, M.Monoi4, Z. Wei5 and S. Kawahito5

1NHK Science and Technical Research Laboratories, Tokyo, JAPAN, 2NHK Engineering System Inc., Japan, 3Brookman Technology, Inc., Japan, 4Toshiba Corporation Semiconductor & Storage Products Company, Japan, 5Shizuoka University, Japan

Piece-Wise-Linear Ramp ADC for CMOS Image Sensor and Calibration Techniques
Pastorelli1,2,3, P. Mellot1, S. Mir2,3, C. Tubert1

1STMicroelectronics, Grenoble, France 2Université Grenoble Alpes, TIMA, Grenoble, France 3CNRS, TIMA, Grenoble, France

A 305ns Conversion-Time, 13-bit All-Digital Column Analog-to-Digital Converter for CMOS Image Sensors in 180nm Technology
Ha Le-Thai1, Adi Xhakoni1, Genis Chapinal2, Manuel Innocent2, Tomas Geurts2, Georges Gielen1

1KU Leuven, ESAT-MICAS, Heverleen, Belgium
2ON Semiconductor, Mechelen, Belgium

High-Speed, High Sensitivity 25 Mega Pixel CMOS Image Sensor with Column Parallel 12 bit Hybrid ADC Architecture
Canaan Sungkuk Hong, Krishna Palle, Toan Bao, Vivian Wang, Yuan Fong, Woonil Choi, Kwang-Bo Cho, Roger Panicacci

ON Semiconductor, San Jose, California, USA

Preliminary Experiment for Precise and Dynamic Digital Calibration for Two-Stage Cyclic ADC Suitable for 33-Mpixel 120-fps 8K Super Hi-Vision CMOS Image Sensor
Toshihisa Watabe1, Kazuya Kitamura2, Tomohiko Kosugi4, Hiroshi Ohtake2, Hiroshi Shimamoto2, and Shoji Kawahito3,4

1NHK Engineering System, Inc., Tokyo, Japan, 2NHK Science & Technology Research Laboratories, Tokyo, Japan , 3Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan  4Brookman Technology Inc., Hamamatsu, Japan

Backside illuminated 84 dB global shutter image sensor
Meynants, G. Beeckman, K. Van Wichelen, T. De Ridder, M. Koch, G.Schippers, M. Bonnifait, W. Diels, J. Bogaerts
CMOSIS nv, Antwerp, Belgium

A Global Shutter sensor used in Active Gated Imaging for automotive
Assaf Lahav1, Adi Birman1, Denis Perhest1, Amos Fenigstein1, Yoav Grauer2, Eyal Levi2
1TowerJazz, Migdal Haemek , Israel
2BrightWay Vision TM LTD, Haifa, Israel

A Smart CMOS Sensor for Optical Touch Screen Applications
Yang NI, Yiming Zhu, Bogdan Arion
New Imaging Technologies SA, Verrières le Buisson France

PTC Inspired Column Level Compression in Low Power CMOS Imagers
Bhuvan, M. Sarkar and S. Chatterjee

Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, India

Linear Mode High Dynamic Range Bouncing Pixel with Single transistor
Carlos A. de Moraes Cruz1, Pablo N. A. Belmonte2, Davies W. de Lima Monteiro2
1Department of Electronics and Computation, Universidade Federal do Amazonas, Manaus, Brazil. 2Department of Electrical Engineering, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil.

Four Concepts for Synchronous, PSN limited, true CDS, HDR imaging
A.K.Kalgi, B.Dierickx, B.Dupont, P.Coppejans, P.Gao, B.Spinnewyn, B.Luyssaert, A. Defernez, J. Zhu, J.Basteleus, Q. Yao, W. Verbruggen, D. Uwaerts, B. Uwaerts, G. Ruttens, G. Cai

Caeleste CVBA, Mechelen, Belgium

Spatiotemporally Varying Exposure Imaging for High Quality Image Reconstruction
Hidenori Tabata, Tomohiro Yamazaki, Toshinori Otaka and Takayuki Hamamoto
Tokyo University of Science, Tokyo , Japan

A single-exposure linear HDR 17-bit hybrid 50μm analogue-digital pixel in 90nm BSI
Jeffrey M. Raynor1, Andrew Scott1,2, Christopher Holyoake1,3, Donald S. Reay2
1STMicroelectronics, Imaging Division, 33 Pinkhill, Edinburgh, UK
2School of Engineering & Physical Sciences, Heriot-Watt University, Edinburgh, UK
3School of Engineering & Electronics, The University of Edinburgh, Edinburgh, UK

Time-resolved imaging device with high-speed modulators for  fluorescence lifetime measurement system
Min-Woong Seo, Keiichiro Kagawa, Keita Yasutomi, Nobukazu Teranishi,and Shoji Kawahito

Research Institute of Electronics, Shizuoka University, Hamamatsu,  Japan

Compact time-gated analog counting SPAD-based pixels for high resolution, single-photon, time-resolved imagers
L.Gasparini1, N.Massari1, M.Perenzoni1, L.Pancheri2, D.Stoppa1
1Fondazione Bruno Kessler, Trento, Italy ,  2University of Trento,Trento, Italy

A 15um CAPD Time-of-Flight pixel with 80% modulation contrast at 100MHz
Daniel Van Nieuwenhove,Kyriaki Fotopoulou, Camilo Ernesto Medina López, Ward van der Tempel

SoftKinetic, Brussels, Belgium

Optimization of pulse-modulation based ToF imaging systems
Andreas Süss1,2, Yenn Leng Tanz3, Maarten Rosmeulen2, Bedrich J. Hosticka1,3
1Fraunhofer IMS, Duisburg, Germany  2IMEC, Leuven, Belgium, 3University Duisburg-Essen, Germany


Wednesday, June 10th  2015

Session 8  Non Visible Imaging
Session Chair:  Inge Peters

Invited presentation: Infrared Imagers State-Of-Art
Mazaleirat
Sofradir, France

Silicon and III-N UV Photon Counting Detectors
Shouleh Nikzad, John J. Hennessy, Michael E. Hoenk, April D. Jewel, Alex G. Carver, Timothy M. Goodsall, Todd J. Jones, Erika Hamden, and L.Douglas Bell
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA

Flexible X-ray detector with high sensitivity using low cost, solution-processed organic photodiodes
Abhishek Kumar1, Date Moet1, Jan-Laurens van der Steen1, Albert van Breemen1, Santosh Shanmugam1, Arjan Langen1, ,Jan Gilot1, Pim Groen1, Ronn Andriessen1, Matthias Simon2, Walter Ruetten2, Alexander Douglas2, Rob Raaijmakers3, Pawel E. Malinowski4, Kris Myny4 and Gerwin H.Gelinck5

1Holst Centre/TNO, Eindhoven, The Netherlands, 2 Philips Research, Eindhoven, The Netherlands, 3 Philips Healthcare, PC Best, The Netherlands, 4IMEC, Department of Large Area Electronics, Leuven, Belgium,5Applied Physics Department, TU Eindhoven, The Netherlands

PixFEL project: hybrid High Dynamic Range X-ray image sensor for application at future FEL facilities
Lucio Pancheri 1,2, Mohamed El Amine Benkechkache1, Roberto Mendicino1,2, Hesong Xu1,2, Gian-Franco Dalla Betta1,2, Giovanni Verzellesi3,2, Daniele Comotti4,5, Lodovico Ratti4,5, Marco Grassi4,5, Luca Lodola4,5, Piero Malcovati4,5, Carla Vacchi4,5, Lorenzo Fabris4,5, Massimo Manghisoni6,5, Valerio Re6,5, Gianluca Traversi6,5, Giovanni Batignani7,8, Stefano Bettarini7,8, Giulia Casarosa7,8, Francesco Forti7,8, Antonio Paladino7,8, Eugenio Paoloni7,8, Giuliana Rizzo7,8, Fabio Morsani8

1Dip. di Ingegneria Industriale (DII), Università di Trento, Italy.  2TIFPA-INFN, Trento, Italy.
3DISMI, Università di Modena e Reggio, Italy.  4Dipartimento di Ingegneria Industriale e dell’Informazione, Università di Pavia, Italy. 5INFN Sezione di Pavia, Pavia, Italy.
6Dip. di Ingegneria e Scienze Applicate, Università di Bergamo, Dalmine (BG) Italy.
7Dip. di Fisica, Università di Pisa, Pisa, Italy. 8INFN Sezione di Pisa, Pisa, Italy.

Monolithic Active Pixel Sensor Development for the Upgrade of the Inner Tracking System of the ALICE Experiment at CERN
Aglieri1, C. Cavicchioli1, N. Chanlek3, A. Collu4, C. Gao11, H. Hillemanns1, A. Junique1, M. Kofarago1,5, M. Keil1, T. Kugathasan1, D. Kim6, J. Kim7, A. Lattuca8, C. A. Marin Tobon1, D. Marras4, M. Mager1, P. Martinengo1, G. Mazza8, H. Mugnier2, L. Musa1, C. Puggionid, J. Rousset2, F. Reidt1,9, P. Riedler1, W. Snoeys1, S. Siddhanta4, G. Usai4, J. W. van Hoorne1,10, P. Yang11, J. Yi7

1CERN, 1210 Geneva 23, Switzerland    2MIND, Archamps, France   3Suranaree, University of Technology, Nakhon Ratchasima, Thailand     4University of Cagliari and INFN, Cagliari, Italy    5University of Utrecht, Utrecht, Netherlands   6Dongguk and Yonsei University, Seoul, Korea    7Pusan National University, Busan, Korea   8University of Torino and INFN, Torino, Italy

9Ruprecht–‐Karls–‐Universitat Heidelberg, Heidelberg, Germany  10Technische Universitat Wien, Vienna, Austria    11Central China Normal University, Wuhan, China

 

Session 09  Innovative Photon Counting
Session Chair:  David Stoppa

Bit-plane Processing Techniques for Low-Light, High Speed Imaging with a SPAD-based QIS
Istvan Gyongy1, Neale Dutton2, Luca Parmesan1, Amy Davies3, Rebecca Saleeb3, Rory Duncan3, Colin Rickman3, Paul Dalgarno3, Robert K. Henderson1

1The University of Edinburgh, Edinburgh, U.K.
2STMicroelectronics Imaging Division, , Edinburgh
3Heriot-Watt University, Institute of Biological Chemistry, Biophysics and Bioengineering, Edinburgh, U.K.  (Slides)


A 2.5pJ/b Readout Circuit for 1000fps Single-bit Quanta Image Sensor
Saleh Masoodian, Arun Rao, Jiaju Ma, Kofi Odame and Eric R. Fossum
Thayer School of Engineering, Dartmouth College, Hanover, NH, USA  (Slides)

Multi-Bit Quanta Image Sensors
Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA  (Slides)

A 256×256 SPAD array with in-pixel Time to Amplitude Conversion for Fluorescence Lifetime Imaging Microscopy
Luca Parmesan1,2, Neale A.W. Dutton1,2, Neil Calder1, Nikola Krstajić1, Andrew J. Holmes2, Lindsay A. Grant2, Robert K. Henderson1

1The University of Edinburgh, Edinburgh, UK
2STMicroelectronics, Imaging Division, Edinburgh UK

A high-resolution single-photon camera based on superconducting single photon detector arrays and compressive sensing
Thomas Gerrits1, Shane Allman1, Daniel J. Lum2, Varun Verma1, John Howell2, Rich Mirin1, Sae Woo Nam1

1National Institute of Standards and Technology, Boulder, USA
2University of Rochester, Department of Physics and Astronomy, NY, USA

 

 

Session 10  Specialty Image Sensors
Session Chair: Shouleh Nikzad

Introductory paper:
Scientific, Back Illuminated CCD development for the Transiting Exoplanet Survey Satellite
Vyshnavi Suntharalingam,
MIT Lincoln Lab, USA

CMOS Charge Transfer TDI With Front Side Enhanced Quantum Efficiency
Mayer, S. Pesenti, F. Barbier, H. Bugnet, J. Endicott, F. Devriere, T. Ligozat e2v semiconductors, Saint Egrève, France

A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response
Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa

Graduate School of Engineering, Tohoku University, Japan

A 2MP Oversampling Image Sensor with 2.75μs Row Time and Conditional Threshold Comparison
Thomas Vogelsan1, Michael Guidash1, Craig Smith1, Jay Endsley1, Loc Truong2 and Rami Yassine2

1 Rambus Inc., Sunnyvale, CA, USA ;  2 Forza Silicon Inc., Pasadena, CA, USA  (Slides)

A 4M,1.4e-noise, 96dB dynamic range, back-side illuminated CMOS image sensor
Xinyang Wang 1,2, Cheng Ma1,2

1Gpixel Inc., ChangChun, China, 2ChangChun Institute of Optics, Fine Mechanics and Physics, CAS, Changchun, China

Toward Multi-MGy / Grad Radiation Hardened CMOS Image Sensors for Nuclear Applications
Goiffon1, F. Corbière1, S. Rolando1, M. Estribeau1, P. Magnan1, B. Avon1, J. Baer1, M. Gaillardin2, P. Paillet2, S. Girard3, R. Molina1, A. Chabane1, C. Marcandella2

1ISAE, Toulouse, France / 2CEA, DAM, DIF, France / 3Université de Saint-Etienne, Laboratoire Hubert Curien, UMR-CNRS France

 

 

Session 11  Charge Multiplication Devices and Image Sensors
Session Chair:  Lindsay Grant

Electron Multiplying Device Made on a 180 nm Standard CMOS Imaging Technology
Pierre Fereyre1, Frédéric Mayer1, Clément Buton2, Timothée Brugière2, Mathieu Fournier1,3, Rémi Barbier2

1e2v, France
2CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, France    3Lyon University, France

Backside-Illuminated 4-T Pinned Avalanche Photodiode Pixel for Readout Noise-Limited Applications
Tomislav Resetar1,2, Koen De Munck2, Luc Haspeslagh2, Piet De Moor2, Paul Goetschalckx2, Robert Puers1,2 and Chris Van Hoof1,2

1K.U. Leuven, ESAT, Leuven, Belgium ; 2IMEC, Leuven, Belgium

A Flexible 32×32 SPAD Image Sensor with Integrated Microlenses
Sun, E. Charbona and R.Ishihara

Delft University of Technology, Delft, The Netherlands

A NIR-Sensitivity-Enhanced Single-Photon Avalanche Diode in 0.18μm CMOS
Cristiano Niclass, Hiroyuki Matsubara, Mineki Soga, Mitsuhiko Ohta, Masaru Ogawa, and Tatsuya Yamashita.

Toyota Central R&D Labs, Inc., Nagakute, Aichi, Japan

Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology
Myung-Jae Lee, Pengfei Sun, and Edoardo Charbon

TU Deft, The Netherlands

High-Sensitivity Image Sensor with Stacked Structure comprising Crystalline Selenium Photoconductor, Crystalline OS FET and CMOS FET
Yoshiyuki Kurokawa1, Takashi Nakagawa1, Shuhei Maeda1, Takuro Ohmaru1, Takayuki Ikeda1,Yasutaka Suzuki1, Naoto Yamade1, Hidekazu Miyairi1, Shigeyuki Imura2, Kenji Kikuchi2,Kazunori Miyakawa2, Hiroshi Ohtake2, Misao Kubota2, Makoto Ikeda3, and Shunpei Yamazaki1

1 Semiconductor Energy Laboratory, Kanagawa, Japan
2 NHK Science and Technology Research Laboratories, Tokyo, Japan
3 Department of Electrical Engineering and Information Systems, The University of Tokyo, Japan

 

Thursday, June 11th  2015

Session 12  Noise
Session Chair:  Dun-Nian Yaung

Invited presentation:

An overview of state-of-the-art denoising and demosaicing techniques: toward a unified framework for handling artifacts during image reconstruction
Goossens , Hiep Luong, Jan Aelterman, Aleksandra Pizurica, Wilfried Philips

Ghent University, Belgium

A low-noise, P-type, vertically-pinned and back-side illuminated pixel structure for image sensor applications
Mamdy1,2 , F. Roy1 ,G.N. Lu2, N. Ahmed1,2

1STMicroelectronics, Crolles, France
2Institut des Nanotechnologies de Lyon (INL), Université Claude Bernard Lyon 1, Villeurbanne, France

A 0.4 e-rms Temporal Readout Noise, 7.5 μm pitch and a 66% fill factor Pixel for Low Light CMOS Image Sensors
Assim Boukhayma1,2, Arnaud Peizerat1 and Christian Enz2

1CEA-LETI, Grenoble, France ; 2ICLAB, EPFL, Switzerland

CMOS image sensor reaching 0.34 e-RMS read noise by inversion-accumulation cycling
Qiang Yao, Bart Dierickx, Benoit Dupont

Caeleste
, Mechelen, Belgium.  (Slides)

Night Vision CMOS Image Sensors Pixel for SubmilliLux Light Conditions
Amos Fenigstein, Adi Birman, and Assaf Lahav

TowerJazz Semiconductor, Migdal Haaemek, Israel

 

Session 13  High Dynamic Range Imagers and SOC
Session Chair:  Shigetoshi Sugawa

A 1280×1080 4.2μm Split-diode Pixel HDR Sensor in 110nm BSI CMOS Process
Trygve Willassen1, Johannes Solhusvik1, Robert Johansson1,Sohrab Yaghmai1, Howard Rhodes2, Sohei Manabe, Duli Mao2, Zhiqiang Lin2, Dajiang Yang2, Orkun Cellek2, Eric Webster2, Siguang Ma2, and BoweiZhang2

1OmniVision Technologies, 1Gaustadalléen 21, 0349 Oslo, Norway,
2OmniVision Technologies, Santa Clara, USA

High Performance 1.3MPix HDR Automotive Image Sensor
Tarek Lulé1, Christophe Mandier1, Arnaud Glais1, Gregory Roffet1, Roger Monteith2, Benoit Deschamps1

1 STMicroelectronics, Imaging Division, Grenoble,France ; 2STMicroelectronics, Imaging Division, Edinburgh, UK

A 120dB DR and 5μm pixel pitch imager based on local integration time adaptation
Peizerat1, F. Guezzi1, A. Dupret1, R. Jalby1, L. Bruno de Sa1, M. Benetti1, W. Guicquero1, Y.Blanchard2

1CEA-LETI, Grenoble, France ; 2ESIEE, Noisy-Le-Grand, France

A 1 Megapixel HDR Image Sensor SoC with Highly Parallel Mixed-Signal Processing
Jens Döge, Christoph Hoppe, Peter Reichel and Nico Peter Fraunhofer
Institute for Integrated Circuits IIS, Design Automation Division EAS,Dresden, Germany

Design of an RGBW Color VGA Rolling and Global Shutter  Dynamic and Active-pixel Vision Sensor
Chenghan Li, Christian Brandli, Raphael Berner, Hongjie Liu, Minhao Yang, Shih-Chii Liu, Tobi Delbruck

Institute of Neuroinformatics, UZH & ETHZ, Zurich, Switzerland

Automatic DR and spatial sampling rate adaptation for secure and privacy-aware ROI tracking based on focal-plane image processing
Ricardo Carmona-Galán, Jorge Fernández-Berni, Ángel Rodríguez- Vázquez
Institute of Microelectronics of Seville, Seville, Spain

 

Session 14  Global Shutter and ADC
Session Chair:  Shung Chieh

A High Speed 1 MPix Sensor with Floating Storage Gate Pixel
Alex Krymski
Luxima Technology LLC, Pasadena, CA, USA

A 1.2 MP 1/3” CMOS Image Sensor with Light Flicker Mitigation
Chris Silsby1, Sergey Velichko2, Scott Johnson2, Yan Ping Lim1, Ray Mentzer1, Jeff Beck1
1ON Semiconductor, Corvallis, OR, USA ;  2ON Semiconductor, Meridian, ID, USA

700 frames/s 2 MPixel global shutter image sensor with 2 Me- full well charge and 12 μm pixel pitch
Meynants, X. Wu, S. Vanhoogenbemt, T. De Ridder, P. De Wit, K. Ruythooren, K. Van Esbroeck

CMOSIS, Antwerp, Belgium

A Flexible 14-bit Column-Parallel ADC Concept for Application in Wafer-Scale X-ray CMOS Imagers
Henk Derks, Daniel Verbugt, Laurens Korthout, Wim de Haan, Wasim Muhammad, Pierluigi Albertini

Teledyne-DALSA Professional Imaging, Eindhoven, The Netherlands  (Slides)

A Two Conversions/Sample Differential Slope Multiple Sampling ADC With Accelerated Counter Architecture
Kazuya Kitamura1, Albert Theuwissen2,3

1NHK Science and Technical Research Laboratories, Tokyo, Japan
2Delft University of Technology, Delft, The Netherlands, 3Harvest Imaging, Bree, Belgium