2015 INTERNATIONAL IMAGE SENSOR WORKSHOP

Monday, June 8^th  2015- AM

Introductory paper:

The State-of-the-Art of Mainstream CMOS Image Sensors Ray Fontaine Competitive Technical Intelligence Group, Chipworks, Inc., Canada

Session 01  Image Sensors for Digital Photography

Session Chair: Eric Stevens

Back-side illuminated 28M-pixel APS-C sensor with high performance
Sungsoo
Choi, Seung Hyun Lim, Moosup Lim, Hyung Jin Bae, Kyo Jin Choo, Jung Hoon Park,
Kang Sun Lee, Seung Sik Kim, Jungho Moon, Kyungmok Son, Eun Sub Shim, Hankook
Cho, Yitae Kim, Seog Heon Ham,JungChak Ahn, Chang Rok Moon and Duckhyung
Lee

Samsung Electronics, System LSI Division , Gyeonggi-city, Gyeonggi-do,
Korea

A Low Noise and High Sensitivity Image Sensor with Imaging and
Phase-Difference Detection AF in All Pixels
M.Kobayashi,
M.Johnson, Y.Wada, H.Tsuboi, J.Iwata, T.Ono, H.Takada, K.Togo, Y.Arishima,
T.Kishi, A.Okita, H.Takahashi, T.Ichikawa

Canon Inc., Japan

A 4M pixel full-PDAF CMOS image sensor with 1.58μm 2X1 On-Chip
Micro-Split-Lens technology
Sozo Yokogawa¹, Isao Hirota¹, Isao Ohdaira¹, Masao Matsumura¹, Atsushi Morimitsu¹, Hiroaki Takahashi¹ Toshio Yamazaki², Hideki Oyaizu²,Yalcin Incesu³, Muhammad Atif³, Yoshikazu Nitta¹  

¹ Sony Corporation, Atsugi, Kanagawa, Japan ² Sony Corporation, Osaki, Shinagawa-ku, Tokyo, Japan ³ Sony Deutschland GmbH, Stuttgart, Germany

Recent developments on large-area CCDs for professional applications
Jan Bosiers, Erik-Jan Manoury, Wilco Klaassens, Holger Stoldt, René Leenen,
Harry van Kuijk, Herman Peek, Walter de Laat Teledyne DALSA Professional Imaging High-Tech Campus 27, 5656AE Eindhoven, The Netherlands

 

Session 02   Stacked Image Sensors

Session Chair : Vladimir Koifman

Stack Chip Technology: A New Direction for CMOS Imagers V.C. Venezia, H. Rhodes, C. Shih, W.Z. Yang, and B. Zhang OmniVision Technologies, Santa Clara, USA

A 3D stacked CMOS image sensor with 16Mpixel global-shutter mode using 4
million interconnections
Toru Kondo, Yoshiaki Takemoto, Kenji Kobayashi, Mitsuhiro Tsukimura, Naohiro
Takazawa, Hideki Kato, Shunsuke Suzuki, Jun Aoki, Haruhisa Saito, Yuichi Gomi,
Seisuke Matsuda and Yoshitaka Tadaki

Olympus Corporation Japan

A 1/1.7-inch 20Mpixel Back-illuminated Stacked CMOS Image Sensor with
parallel multiple sampling
Hayato
Wakabayashi¹, Atsushi Suzuki¹,Nobutaka
Shimamura¹,Toshiki Kainuma¹, Kensuke Koiso³,
Atsushi Masagaki¹, Yoichi Yagasaki¹, Shigeru
Gonoi², Masatoshi Mizuno², Tatsuya
Sugioka¹,Takafumi Morikawa¹, Yoshiaki Inada¹

¹Sony, Atsugi, Japan, ²Sony LSI Design, Atsugi, Japan,
³Sony Semiconductor, Kumamoto, Japan

A Three-Dimensional Integration Technology with Embedded Au Electrodes for
stacked CMOS Image Sensors
Masahide Goto¹, Kei Hagiwara¹, Yoshinori
Iguchi¹, Hiroshi Ohtake¹, Takuya
Saraya²,Masaharu Kobayashi², Eiji Higurashi²,
Hiroshi Toshiyoshi²,Toshiro Hiramoto²

¹ NHK Science and Technology Research Laboratories, Tokyo, Japan, ² The University of Tokyo, Tokyo, Japan

 

Session 03  Imaging Devices, Characterization and Modeling

Session Chair: Vyshnavi Suntharalingam

Detection and Shielding of Photon Emission in Stacked CIS
Calvin Chao, Chin-Hao Chang, Manoj Mhala, Hon-Yih Tu,Shang-Fu Yeh,Kuo-Yu
Chou, Po-Sheng Chou, Charles Liu, and Fu-Lung Hsueh

Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan  (Slides)

The source decomposition of Dark FPN and its improvement by Stacked CIS
process
Yamashita, W.H. Wu, W.J. Chiang, C.H. Chung, R.J. Lin, J.J. Sze, J.C. Liu,
C.H. Tseng, H. Sumiand S.G. Wuu

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan

Interface State Generation by Substrate Injection Through the Transfer Gate
Chris Hong¹, Rick Jerome¹, David Price¹,
Verne Hornback¹, Kyle Thomas², Rusty Winzenread²

¹ ON Semiconductor, Gresham, OR, USA ² ON Semiconductor, Santa Clara, CA, USA

Absolute Pinning Voltage Measurement: Comparison between In-pixel and JFET
Extraction Methods
Pelamatti¹, V. Goiffon¹, A. De Ipanema¹, P.
Magnan¹, C. Virmontois² O. Saint-Pe³, M.
Breart de Boisanger³

¹
ISAE Toulouse  ²CNES, Toulouse, ³Airbus Defence and
Space, Toulouse, France

Fully Depleted SOI Pixel Photo Detectors with Backgate Surface Potential
Pinning
Hiroki Kamehama¹, Shoji Kawahito¹, Sumeet
Shrestha¹, Keita Yasutomi¹, Keiichiro
Kagawa¹,Aayaki Takeda²,Takeshi Go Tsuru²,and
Yasuo Arai³

¹Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan ²Department of Physics, Kyoto University, Sakyo, Japan ³National High Energy Accelerator Research Organization, Ibaraki Japan

 

Session 04  Spectral Imaging and Microlenses

Session Chair:  Yitae Kim

Two Layer Image Sensor Pixel Concept for Enhanced Low Light Color Imaging
Leo Anzagira, Eric R. Fossum Thayer Engineering School, Dartmouth College, Hanover, NH, USA

New Color Filter Patterns and Demosaic for Sub-micron Pixel Arrays
Biay-Cheng Hseih¹, Hasib Siddiqui¹,
Jiafu
Luo¹, Todor Gerogiev¹, Kalin Atanassov¹,
Sergio Goma¹, and HY Cheng², JJ Sze², RJ
Lin², HY Chou², Calvin Chao ², SG Wuu²

¹Qualcomm Inc., San Diego,CA,USA,  ²TSMC,Hsinchu, Taiwan

A
80% QE High Readout Speed 1024 Pixel Linear Photodiode Array for UV-VIS-NIR
Spectroscopy
Rihito
Kuroda¹, Takahiro Akutsu¹, Yasumasa Koda¹,
Kenji Takubo², Hideki Tominaga² Ryuuta
Hirose², Tomohiro Karasawa² and Shigetoshi Sugawa¹

¹Graduate School of Engineering, Tohoku University, Japan ²Shimadzu Corporation Sendai, Miyagi, Japan

Pixel performance enhancement by integrated diffractive optics
Rochus, Xavier Rottenberg, Ingrid De Wolf, Philippe Soussan, and Piet De Moor Imec, Leuven, Belgium

 

Session 05  Poster Flash Presentations (Group 1)

Session Chair:  Gennadiy Agranov

On Chip Optics Solution on Small Pixel CIS S/N Ratio Improvement
Chih-Ching Chang, Wu-Cheng Kuo , Ken_Wu , Yu-Kun Hsiao, JC_Hsieh. VisEra Technologies Company, Hsinchu Science Park, Taiwan

Color Filter Array Patterns Designed to Mitigate Crosstalk Effects in Small
Pixel Image Sensors
Leo Anzagira and Eric R. Fossum, Thayer Engineering School, Dartmouth College, Hanover, NH , USA

Read Noise Distribution Measurement and Modeling of CMOS Image Sensors
Boyd Fowler, Clemenz Portmann, Lele Wang and Steve Tran Google Inc., Mountain View CA 94043 USA

Twinkling Behavior in Ultra-High-Resolution CMOS Global Shutter Pixels
Tsung-Hsun Tsai, David Marchesan, Naser Faramarzpour, Matthias Sonder, Eric Fox Teledyne DALSA Inc., Waterloo, ON, Canada 

Electrical Characterization Method for Two Stage Transfer Global Shutter
Pixels
Manuel Innocent ON Semiconductor, Mechelen, Belgium.

CMOS Image Sensor for Multi-Aperture Optics – A 15×9 Array sensor for low
z-height 720p camera modules with depth information
Harald Neubauer, Thomas Schweiger

Fraunhofer Institute for Integrated Circuits (IIS), Erlangen, Germany

Lens-free holographic imaging of microscopic objects using photonic
structures and CMOS imagers
Murali Jayapala, Richard Stahl, Geert Vanmeerbeeck, Andy Lambrechts IMEC, Leuven, Belgium

Design and Optimisation of Large 4T Pixel Xuezhou
Cao¹, Daniel Gäbler², Chris Lee¹, Tee Pei
Ling³, Devorah Anak Jarau³, David Kho Ching
Tien³, Teo Boon Chuan³, Brendan Bold¹

^1,2X-FAB Semiconductor Foundries AG,¹Branch Office Plymouth,
Plymouth, UK, ²Erfurt, Germany ³X-FAB Sarawak Sdn. Bhd., Sarawak, Malaysia

Investigating Transfer Gate Potential Barrier by Feed-Forward Effect
Measurement
Yang Xu¹, Xiaoliang Ge¹ Albert J.P. Theuwissen^1,2
1Delft University of Technology, Delft, the Netherlands ²Harvest Imaging, Bree, Belgium

Analysis and Reduction of Floating Diffusion Capacitance Components of CMOS
Image Sensor for Photon-Countable Sensitivity
Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda and
Shigetoshi Sugawa

Graduate School of Engineering, Tohoku University, Japan

A 30 fps 1920 x 1080 pixel Electron Multiplying CCD Image Sensor with
Per-Pixel Switchable Gain
Parks, S. Kosman, E. Nelson, N. Roberts, and S. Yaniga

ON Semiconductor , Rochester,  USA

Superlattice-doped detectors for UV through gamma-ray imaging and spectroscopy
E. Hoenk¹ , J. Hennessy¹ , A. D. Jewell¹ ,
A. G. Carver¹ , T. J. Jones¹ , S. Nikzad¹, M.
McClish² ,S. Tsur³ , G. Meynants⁴, J.
Sgro⁵

¹
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA,
USA ²
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA, USA ³ Applied Materials Inc., 9 Oppenheimer St., Rehovot, Israel ⁴
CMOSIS , Antwerp, Belgium     ⁵ Alacron, Inc.,  Nashua, NH ,
USA

Investigation of Implantation Damage Recovery using Microwave Annealing for
High Performance Image Sensing Devices.
Masatoshi Kimura¹, Tadashi Yamaguchi² and Takashi
Kuroi¹

¹Technology Division, Renesas Semiconductor Manufacturing Corp., Japan ²Production Technology Development Unit, Renesas Electronics Corp., Japan

The Delamination Defect Improvement of High Transmittance Dielectric (HTD)
Film on BSI Image Sensor Manufacturing
Sung-Han Tsai, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Li, Hsin-Chi Chen,
Yung-Lung Hsu

Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan

Active Pixel Concepts for High-Resolution Large Area Imagers
Florian De Roose^1,2, Soeren Steudely², Pawel E.
Malinowskiy², Kris Myny², Adi
Xhakoni¹,Georges Gielen^1,2, Jan Genoey^1,2,
Wim Dehaene^{1,2 1}Department of Electrical Engineering (ESAT), KU Leuven, Belgium ²Large Area Electronics Department, IMEC, Belgium

High-density 3D interconnects Technology: The key for burst-mode very high
speed imaging?
Philippe Martin-Gonthier, Fernando Raymundo, Pierre Magnan ISAE, Toulouse, France

CMOS image sensor with pseudorandom pixel placement for jaggy reduction in
line representation
Chihiro Izaki, Junichi Akita Kanazawa University, Kanazawa, Japan  (Slides)

A Dual-Mode CMOS Imager for Free-Space Optical Communication with Signal
Light Source Tracking and Background Cancellation
Chih-Hao Lin, Chih-Cheng Hsieh Department of Electrical Engineering, National Tsing Hua University, Hsinchu,
Taiwan

Imaging sparse events at high speed Gaozhan Cai, Bart Dierickx, Bert Luyssaert, Nick Witvrouwen, Gerlinde Ruttens Caeleste CVBA, Mechelen, Belgium

 

Tuesday, June 9^th  2015

Session 06  High speed, Gated and Time-Of-Flight Imaging

Session Chair:  Guy Meynants

Notes about the limits of ultra-high speed solid-state imagers
Turchetta

Rutherford Appleton Laboratory, Science and Technology Facilities Council
(STFC), Harwell Science and Innovation Campus, U.K.  (Slides)

Toward 10 Gfps: Factors Limiting the Frame Rate of the BSI MCG Image Sensor
T. S. Dao^1,6, T. G. Etoh¹, K. Shimonomura¹,
Q. Nguyen¹, N. Hayashi², Y. Kamakura³, C.
Zhang⁴, E. Charbon⁴, P. Goetschalckx⁵, Luc
Haspeslagh⁵, and P. De Moor⁵

¹Ritsumeikan University Kusatsu Japan, ²Astrodesign Inc.,
³Osaka University, ⁴Technical University Delft,
⁵IMEC, ⁶Research Institute for Science and Technology,
Ritsumeikan University, Kusatsu JAPAN

A 20Mfps Global Shutter CMOS Image Sensor with Improved Sensitivity and
Power Consumption
Shigetoshi
Sugawa, Rihito Kuroda, Tohru Takeda, Fan Shao, Ken Miyauchi and Yasuhisa
Tochigi

Graduate School of Engineering, Tohoku University, Japan

Oversampled ITOF Imaging Techniques using SPAD-based Quanta Image Sensors
Neale A.W. Dutton^1,2, Luca Parmesan^1,2, Salvatore
Gnecchi^1,2, Istvan Gyongy², Neil Calder²,
Bruce R. Rae¹, Lindsay A. Grant¹, Robert K.
Henderson²

¹STMicroelectronics, Imaging Division,  Edinburgh, UK ²The University of Edinburgh, Edinburgh, UK

A High QE, Fast Shuttered CMOS Image Sensor with a Vertical Overflow Drain
Shutter Mechanism
Erez
Tadmor^1,3 , Assaf Lahav², Alex Fish³, Giora
Yahav¹, David Cohen¹

¹Advanced Imaging Technologies Group, Microsoft R&D Center, Haifa, Israel ²Tower-Jazz Semiconductor Ltd. Migdal Haemek, Israel ³Faculty of Engineering, Bar-Ilan University, Ramat Gan, Israel

A multi-aperture compressive time-of-flight CMOS imager for pixelwise
coarse histogram acquisition
Futa
Mochizuki¹, Keiichiro Kagawa¹, Min-Woong
Seo¹, Taishi Takasawa¹,Keita Yasutomi¹, and
Shoji Kawahito¹

¹Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan

 

Keynote presentation: History of the creation of MOS vision sensor arrays and associated
topics 

And what does – or should – the future hold? Peter JW Noble 2015 IISS Pioneering Achievement Award recipient.

 

Session 07  Poster Flash Presentations (Group 2)

Session Chair:  Shoji Kawahito

Designing pixel parallel localized drivers of a 3D 1Gfps image sensor
family
Zhang¹ V. T. S. Dao², T. G. Etoh², K.
Shimonomura², E. Charbon¹

¹Delft University of Technology, the Netherlands; ²Ritsumeikan
University, Japan

A 25 Mpixel, 80fps, CMOS Imager with an In-Pixel-CDS Global Shutter Pixel
Tomas Geurts, Thomas Cools, Cedric Esquenet, Rahul Sankhe, Anilkumar
Prathipati, Mukesh Rao Engla Syam, Aniruddha Bangalore Dayalu, V. Penchala
Reddy Gaddam ON Semiconductor, Belgium

A 14-bit, 33-Mpixel, 120-fps Image Sensor with DMOS Capacitors in
90-nm/65-nm CMOS
Yasue¹, K. Kitamura¹, T. Watabe², H.
Shimamoto¹, T. Kosugi³, T. Watanabe³,S.
Aoyama³, M.Monoi⁴, Z. Wei⁵ and S.
Kawahito⁵

¹NHK Science and Technical Research Laboratories, Tokyo, JAPAN,
²NHK Engineering System Inc., Japan, ³Brookman
Technology, Inc., Japan, ⁴Toshiba Corporation Semiconductor &
Storage Products Company, Japan, ⁵Shizuoka University, Japan

Piece-Wise-Linear Ramp ADC for CMOS Image Sensor and Calibration Techniques
Pastorelli^1,2,3, P. Mellot¹, S. Mir^2,3, C.
Tubert¹

¹STMicroelectronics, Grenoble, France ²Université Grenoble Alpes,
TIMA, Grenoble, France ³CNRS, TIMA, Grenoble, France

A 305ns Conversion-Time, 13-bit All-Digital Column Analog-to-Digital
Converter for CMOS Image Sensors in 180nm Technology
Ha Le-Thai¹, Adi Xhakoni¹, Genis Chapinal²,
Manuel Innocent², Tomas Geurts², Georges Gielen¹

¹KU Leuven, ESAT-MICAS, Heverleen, Belgium ²ON Semiconductor, Mechelen, Belgium

High-Speed, High Sensitivity 25 Mega Pixel CMOS Image Sensor with Column
Parallel 12 bit Hybrid ADC Architecture
Canaan Sungkuk Hong, Krishna Palle, Toan Bao, Vivian Wang, Yuan Fong, Woonil
Choi, Kwang-Bo Cho, Roger Panicacci

ON Semiconductor, San Jose, California, USA

Preliminary Experiment for Precise and Dynamic Digital Calibration for
Two-Stage Cyclic ADC Suitable for 33-Mpixel 120-fps 8K Super Hi-Vision CMOS
Image Sensor
Toshihisa
Watabe¹, Kazuya Kitamura², Tomohiko Kosugi⁴,
Hiroshi Ohtake², Hiroshi Shimamoto², and Shoji
Kawahito^3,4

¹NHK Engineering System, Inc., Tokyo, Japan, ²NHK Science &
Technology Research Laboratories, Tokyo, Japan , ³Research
Institute of Electronics, Shizuoka University, Hamamatsu, Japan 
⁴Brookman Technology Inc., Hamamatsu, Japan

Backside illuminated 84 dB global shutter image sensor
Meynants, G. Beeckman, K. Van Wichelen, T. De Ridder, M. Koch, G.Schippers,
M. Bonnifait, W. Diels, J. Bogaerts CMOSIS nv, Antwerp, Belgium

A Global Shutter sensor used in Active Gated Imaging for automotive
Assaf
Lahav¹, Adi Birman¹, Denis Perhest¹, Amos
Fenigstein¹, Yoav Grauer^2, Eyal Levi^{2 1}TowerJazz, Migdal Haemek , Israel ²BrightWay Vision TM LTD, Haifa, Israel

A Smart CMOS Sensor for Optical Touch Screen Applications
Yang NI, Yiming Zhu, Bogdan Arion New Imaging Technologies SA, Verrières le Buisson France

PTC Inspired Column Level Compression in Low Power CMOS Imagers
Bhuvan, M. Sarkar and S. Chatterjee

Department of Electrical Engineering, Indian Institute of Technology Delhi,
New Delhi, India

Linear Mode High Dynamic Range Bouncing Pixel with Single transistor
Carlos A. de Moraes Cruz¹, Pablo N. A. Belmonte²,
Davies W. de Lima Monteiro^{2 1}Department of Electronics and Computation, Universidade Federal do Amazonas,
Manaus, Brazil. ²Department of Electrical Engineering, Universidade
Federal de Minas Gerais, Belo Horizonte, Brazil.

Four Concepts for Synchronous, PSN limited, true CDS, HDR imaging
A.K.Kalgi, B.Dierickx, B.Dupont, P.Coppejans, P.Gao, B.Spinnewyn, B.Luyssaert, A.
Defernez, J. Zhu, J.Basteleus, Q. Yao, W. Verbruggen, D. Uwaerts, B. Uwaerts,
G. Ruttens, G. Cai

Caeleste CVBA, Mechelen, Belgium

Spatiotemporally Varying Exposure Imaging for High Quality Image
Reconstruction
Hidenori Tabata, Tomohiro Yamazaki, Toshinori Otaka and Takayuki Hamamoto Tokyo University of Science, Tokyo , Japan

A single-exposure linear HDR 17-bit hybrid 50μm analogue-digital pixel in 90nm BSI Jeffrey M. Raynor¹, Andrew Scott^1,2, Christopher
Holyoake^1,3, Donald S. Reay^{2 1}STMicroelectronics, Imaging Division, 33 Pinkhill, Edinburgh, UK ²School of Engineering & Physical Sciences, Heriot-Watt University,
Edinburgh, UK ³School of Engineering & Electronics, The University of Edinburgh,
Edinburgh, UK

Time-resolved imaging device with high-speed modulators for  fluorescence
lifetime measurement system
Min-Woong Seo, Keiichiro Kagawa, Keita Yasutomi, Nobukazu Teranishi,and Shoji
Kawahito

Research Institute of Electronics, Shizuoka University, Hamamatsu,  Japan

Compact time-gated analog counting SPAD-based pixels for high resolution,
single-photon, time-resolved imagers
L.Gasparini¹, N.Massari¹, M.Perenzoni¹,
L.Pancheri², D.Stoppa^{1 1}Fondazione Bruno Kessler, Trento, Italy ,  ²University of
Trento,Trento, Italy

A 15um CAPD Time-of-Flight pixel with 80% modulation contrast at 100MHz
Daniel Van Nieuwenhove,Kyriaki Fotopoulou, Camilo Ernesto Medina López, Ward
van der Tempel

SoftKinetic, Brussels, Belgium

Optimization of pulse-modulation based ToF imaging systems
Andreas Süss^1,2, Yenn Leng Tanz³, Maarten
Rosmeulen², Bedrich J. Hosticka^{1,3 1}Fraunhofer IMS, Duisburg, Germany  ²IMEC, Leuven, Belgium,
³University Duisburg-Essen, Germany

Wednesday, June 10^th  2015

Session 8  Non Visible Imaging

Session Chair:  Inge Peters

Invited presentation: Infrared Imagers State-Of-Art
Mazaleirat Sofradir, France

Silicon and III-N UV Photon Counting Detectors Shouleh
Nikzad, John J. Hennessy, Michael E. Hoenk, April D. Jewel, Alex G. Carver,
Timothy M. Goodsall, Todd J. Jones, Erika Hamden, and L.Douglas Bell Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA,
USA

Flexible X-ray detector with high sensitivity using low cost,
solution-processed organic photodiodes
Abhishek Kumar¹, Date Moet¹, Jan-Laurens van der
Steen¹, Albert van Breemen¹, Santosh
Shanmugam¹, Arjan Langen¹, ,Jan Gilot¹, Pim
Groen¹, Ronn Andriessen¹, Matthias Simon²,
Walter Ruetten², Alexander Douglas², Rob
Raaijmakers³, Pawel E. Malinowski⁴, Kris Myny⁴
and Gerwin H.Gelinck⁵

¹Holst Centre/TNO, Eindhoven, The Netherlands, ² Philips Research,
Eindhoven, The Netherlands, ³ Philips Healthcare, PC Best, The
Netherlands, ⁴IMEC, Department of Large Area Electronics, Leuven,
Belgium,⁵Applied Physics Department, TU Eindhoven, The
Netherlands

PixFEL
project: hybrid High Dynamic Range X-ray image sensor for application at
future FEL facilities
Lucio Pancheri ^1,2, Mohamed El Amine Benkechkache¹,
Roberto Mendicino^1,2, Hesong Xu^1,2, Gian-Franco Dalla
Betta^1,2, Giovanni Verzellesi^3,2, Daniele
Comotti^4,5, Lodovico Ratti^4,5, Marco
Grassi^4,5, Luca Lodola^4,5, Piero
Malcovati^4,5, Carla Vacchi^4,5, Lorenzo
Fabris^4,5, Massimo Manghisoni^6,5, Valerio
Re^6,5, Gianluca Traversi^6,5, Giovanni
Batignani^7,8, Stefano Bettarini^7,8, Giulia
Casarosa^7,8, Francesco Forti^7,8, Antonio
Paladino^7,8, Eugenio Paoloni^7,8, Giuliana
Rizzo^7,8, Fabio Morsani⁸

¹Dip. di Ingegneria Industriale (DII), Università di Trento, Italy.  ²TIFPA-INFN, Trento, Italy. ³DISMI, Università di Modena e Reggio, Italy.  ⁴Dipartimento di Ingegneria Industriale e dell’Informazione, Università di
Pavia, Italy. ⁵INFN Sezione di Pavia, Pavia, Italy. ⁶Dip. di Ingegneria e Scienze Applicate, Università di Bergamo, Dalmine (BG)
Italy. ⁷Dip. di Fisica, Università di Pisa, Pisa, Italy. ⁸INFN Sezione di
Pisa, Pisa, Italy.

Monolithic Active Pixel Sensor Development for the Upgrade of the Inner
Tracking System of the ALICE Experiment at CERN
Aglieri¹, C. Cavicchioli¹, N. Chanlek³, A.
Collu⁴, C. Gao¹¹, H. Hillemanns¹, A.
Junique¹, M. Kofarago^1,5, M. Keil¹, T.
Kugathasan¹, D. Kim⁶, J. Kim⁷, A.
Lattuca⁸, C. A. Marin Tobon¹, D. Marras⁴, M.
Mager¹, P. Martinengo¹, G. Mazza⁸, H.
Mugnier², L. Musa¹, C. Puggionid, J. Rousset²,
F. Reidt^1,9, P. Riedler¹, W. Snoeys¹, S.
Siddhanta⁴, G. Usai⁴, J. W. van Hoorne^1,10, P.
Yang¹¹, J. Yi⁷

¹CERN, 1210 Geneva 23, Switzerland    ²MIND, Archamps,
France   ³Suranaree, University of Technology, Nakhon Ratchasima,
Thailand     ⁴University of Cagliari and INFN, Cagliari, Italy   
⁵University of Utrecht, Utrecht, Netherlands   ⁶Dongguk
and Yonsei University, Seoul, Korea    ⁷Pusan National University,
Busan, Korea   ⁸University of Torino and INFN, Torino, Italy

⁹Ruprecht–‐Karls–‐Universitat Heidelberg, Heidelberg, Germany 
¹⁰Technische Universitat Wien, Vienna, Austria   
¹¹Central China Normal University, Wuhan, China  

Session 09  Innovative Photon Counting

Session Chair:  David Stoppa

Bit-plane Processing Techniques for Low-Light, High Speed Imaging with a
SPAD-based QIS
Istvan
Gyongy¹, Neale Dutton², Luca Parmesan¹, Amy
Davies³, Rebecca Saleeb³, Rory Duncan³, Colin
Rickman³, Paul Dalgarno³, Robert K. Henderson¹

¹The University of Edinburgh, Edinburgh, U.K. ²STMicroelectronics Imaging Division, , Edinburgh ³Heriot-Watt University, Institute of Biological Chemistry, Biophysics and
Bioengineering, Edinburgh, U.K.  (Slides)

A 2.5pJ/b Readout Circuit for 1000fps Single-bit Quanta Image Sensor
Saleh Masoodian, Arun Rao, Jiaju Ma, Kofi Odame and Eric R. Fossum Thayer School of Engineering, Dartmouth College, Hanover, NH, USA  (Slides)

Multi-Bit Quanta Image Sensors Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA  (Slides)

A 256×256 SPAD array with in-pixel Time to Amplitude Conversion for
Fluorescence Lifetime Imaging Microscopy
Luca Parmesan^1,2, Neale A.W. Dutton^1,2, Neil
Calder¹,
Nikola Krstajić¹, Andrew J. Holmes², Lindsay A.
Grant², Robert K. Henderson¹

¹The University of Edinburgh, Edinburgh, UK ²STMicroelectronics, Imaging Division, Edinburgh UK

A high-resolution single-photon camera based on superconducting single
photon detector arrays and compressive sensing
Thomas Gerrits¹, Shane Allman¹, Daniel J.
Lum², Varun Verma¹, John Howell², Rich
Mirin¹, Sae Woo Nam¹

¹National Institute of Standards and Technology, Boulder, USA ²University of Rochester, Department of Physics and Astronomy, NY, USA

   

Session 10  Specialty Image Sensors

Session Chair: Shouleh Nikzad

Introductory paper: Scientific, Back Illuminated CCD development for the Transiting Exoplanet
Survey Satellite
Vyshnavi Suntharalingam, MIT Lincoln Lab, USA

CMOS Charge Transfer TDI With Front Side Enhanced Quantum Efficiency
Mayer, S. Pesenti, F. Barbier, H. Bugnet, J. Endicott, F. Devriere, T.
Ligozat e2v semiconductors, Saint Egrève, France

A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral
Response
Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda,
Shigetoshi Sugawa

Graduate School of Engineering, Tohoku University, Japan

A 2MP Oversampling Image Sensor with 2.75μs Row Time and Conditional Threshold Comparison Thomas Vogelsan¹, Michael Guidash¹, Craig
Smith¹, Jay Endsley¹, Loc Truong² and Rami
Yassine²

¹
Rambus Inc., Sunnyvale, CA, USA ;  ² Forza Silicon Inc., Pasadena,
CA, USA  (Slides)

A 4M,1.4e-noise, 96dB dynamic range, back-side illuminated CMOS image
sensor
Xinyang Wang ^1,2, Cheng Ma^1,2

¹Gpixel Inc., ChangChun, China, ²ChangChun Institute of Optics,
Fine Mechanics and Physics, CAS, Changchun, China

Toward Multi-MGy / Grad Radiation Hardened CMOS Image Sensors for Nuclear
Applications
Goiffon¹, F. Corbière¹, S. Rolando¹, M.
Estribeau¹, P. Magnan¹, B. Avon¹, J.
Baer¹, M. Gaillardin², P. Paillet², S.
Girard³, R. Molina¹, A. Chabane¹, C.
Marcandella²

¹ISAE, Toulouse, France / ²CEA, DAM, DIF, France /
³Université de Saint-Etienne, Laboratoire Hubert Curien, UMR-CNRS
France

   

Session 11  Charge Multiplication Devices and Image Sensors

Session Chair:  Lindsay Grant

Electron Multiplying Device Made on a 180 nm Standard CMOS Imaging
Technology
Pierre Fereyre¹, Frédéric Mayer¹, Clément
Buton², Timothée Brugière², Mathieu
Fournier^1,3, Rémi Barbier²

¹e2v, France ²CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, France   
³Lyon University, France

Backside-Illuminated 4-T Pinned Avalanche Photodiode Pixel for Readout
Noise-Limited Applications
Tomislav
Resetar^1,2, Koen De Munck², Luc Haspeslagh²,
Piet De Moor², Paul Goetschalckx², Robert Puers^1,2 and Chris Van Hoof^1,2

¹K.U. Leuven, ESAT, Leuven, Belgium ; ²IMEC, Leuven, Belgium

A Flexible 32×32 SPAD Image Sensor with Integrated Microlenses
Sun, E. Charbona and R.Ishihara

Delft University of Technology, Delft, The Netherlands

A NIR-Sensitivity-Enhanced Single-Photon Avalanche Diode in 0.18μm CMOS Cristiano Niclass, Hiroyuki Matsubara, Mineki Soga, Mitsuhiko Ohta, Masaru
Ogawa, and Tatsuya Yamashita.

Toyota Central R&D Labs, Inc., Nagakute, Aichi, Japan

Characterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI
CMOS Technology
Myung-Jae Lee, Pengfei Sun, and Edoardo Charbon

TU Deft, The Netherlands

High-Sensitivity Image Sensor with Stacked Structure comprising Crystalline
Selenium Photoconductor, Crystalline OS FET and CMOS FET
Yoshiyuki Kurokawa¹, Takashi Nakagawa¹, Shuhei
Maeda¹, Takuro Ohmaru¹, Takayuki
Ikeda¹,Yasutaka Suzuki¹, Naoto Yamade¹,
Hidekazu Miyairi¹, Shigeyuki Imura², Kenji
Kikuchi²,Kazunori Miyakawa², Hiroshi Ohtake²,
Misao Kubota², Makoto Ikeda³, and Shunpei Yamazaki¹

¹ Semiconductor Energy Laboratory, Kanagawa, Japan ² NHK Science and Technology Research Laboratories, Tokyo, Japan ³
Department of Electrical Engineering and Information Systems, The University
of Tokyo, Japan

 

Thursday, June 11^th  2015

Session 12  Noise

Session Chair:  Dun-Nian Yaung

Invited presentation:

An overview of state-of-the-art denoising and demosaicing techniques:
toward a unified framework for handling artifacts during image
reconstruction
Goossens , Hiep Luong, Jan Aelterman, Aleksandra Pizurica, Wilfried
Philips

Ghent University, Belgium

A low-noise, P-type, vertically-pinned and back-side illuminated pixel
structure for image sensor applications
Mamdy^1,2 , F. Roy¹ ,G.N. Lu², N. Ahmed^1,2

¹STMicroelectronics, Crolles, France ²Institut des Nanotechnologies de Lyon (INL), Université Claude Bernard Lyon
1, Villeurbanne, France

A 0.4 e-rms Temporal Readout Noise, 7.5 μm pitch and a 66% fill factor Pixel for Low Light CMOS Image Sensors
Assim
Boukhayma^1,2, Arnaud Peizerat¹ and Christian Enz²

¹CEA-LETI, Grenoble, France ; ²ICLAB, EPFL, Switzerland

CMOS image sensor reaching 0.34 e-RMS read noise by inversion-accumulation
cycling
Qiang Yao, Bart Dierickx, Benoit Dupont Caeleste, Mechelen, Belgium.  (Slides)

Night Vision CMOS Image Sensors Pixel for SubmilliLux Light Conditions
Amos Fenigstein, Adi Birman, and Assaf Lahav

TowerJazz Semiconductor, Migdal Haaemek, Israel

 

Session 13  High Dynamic Range Imagers and SOC

Session Chair:  Shigetoshi Sugawa

A 1280×1080 4.2μm Split-diode Pixel HDR Sensor in 110nm BSI CMOS Process Trygve
Willassen¹, Johannes Solhusvik¹, Robert
Johansson¹,Sohrab Yaghmai¹, Howard Rhodes²,
Sohei Manabe, Duli Mao², Zhiqiang Lin², Dajiang
Yang², Orkun Cellek², Eric Webster², Siguang
Ma², and BoweiZhang²

¹OmniVision Technologies, ¹Gaustadalléen 21, 0349 Oslo, Norway, ²OmniVision Technologies, Santa Clara, USA

High Performance 1.3MPix HDR Automotive Image Sensor Tarek Lulé¹, Christophe Mandier¹, Arnaud
Glais¹, Gregory Roffet¹, Roger Monteith²,
Benoit Deschamps¹

¹
STMicroelectronics, Imaging Division, Grenoble,France ; ²STMicroelectronics, Imaging Division, Edinburgh, UK

A 120dB DR and 5μm pixel pitch imager based on local integration time adaptation
Peizerat¹, F. Guezzi¹, A. Dupret¹, R.
Jalby¹, L. Bruno de Sa¹, M. Benetti¹, W.
Guicquero¹, Y.Blanchard²

¹CEA-LETI, Grenoble, France ; ²ESIEE, Noisy-Le-Grand, France

A 1 Megapixel HDR Image Sensor SoC with Highly Parallel Mixed-Signal
Processing
Jens Döge, Christoph Hoppe, Peter Reichel and Nico Peter Fraunhofer Institute for Integrated Circuits IIS, Design Automation Division
EAS,Dresden, Germany

Design of an RGBW Color VGA Rolling and Global Shutter  Dynamic and
Active-pixel Vision Sensor
Chenghan
Li, Christian Brandli, Raphael Berner, Hongjie Liu, Minhao Yang, Shih-Chii
Liu, Tobi Delbruck

Institute of Neuroinformatics, UZH & ETHZ, Zurich, Switzerland

Automatic DR and spatial sampling rate adaptation for secure and privacy-aware ROI tracking
based on focal-plane image processing
Ricardo Carmona-Galán, Jorge Fernández-Berni, Ángel Rodríguez- Vázquez Institute of Microelectronics of Seville, Seville, Spain

 

Session 14  Global Shutter and ADC

Session Chair:  Shung Chieh

A High Speed 1 MPix Sensor with Floating Storage Gate Pixel
Alex Krymski Luxima Technology LLC, Pasadena, CA, USA

A 1.2 MP 1/3” CMOS Image Sensor with Light Flicker Mitigation
Chris Silsby¹, Sergey Velichko², Scott
Johnson², Yan Ping Lim¹, Ray Mentzer¹, Jeff
Beck^{1 1}ON Semiconductor, Corvallis, OR, USA ;  ²ON Semiconductor,
Meridian, ID, USA

700 frames/s 2 MPixel global shutter image sensor with 2 Me- full well
charge and 12 μm pixel pitch
Meynants, X. Wu, S. Vanhoogenbemt, T. De Ridder, P. De Wit, K. Ruythooren, K.
Van Esbroeck

CMOSIS, Antwerp, Belgium

A Flexible 14-bit Column-Parallel ADC Concept for Application in
Wafer-Scale X-ray CMOS Imagers
Henk
Derks, Daniel Verbugt, Laurens Korthout, Wim de Haan, Wasim Muhammad,
Pierluigi Albertini

Teledyne-DALSA Professional Imaging, Eindhoven, The Netherlands  (Slides)

A Two Conversions/Sample Differential Slope Multiple Sampling ADC With
Accelerated Counter Architecture
Kazuya Kitamura¹, Albert Theuwissen^2,3

¹NHK Science and Technical Research Laboratories, Tokyo, Japan
²Delft University of Technology, Delft, The Netherlands,
³Harvest Imaging, Bree, Belgium