| Monday 2 June 2025 | |
| Session 1: Pixel Design and Process Technology (I)
Session Chair: Albert Theuwissen (Harvest Imaging) |
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| R01.1 | State-of-the-Art CMOS Image Sensors: Looking Under the Hood Daniel McGrath TechInsights |
| R01.2 | A 0.5μm pixel-pitch 200-Megapixel CMOS Image Sensor with Partially Removed Front Deep Trench Isolation for Enhanced Noise Performance and Sensitivity Minkyung Kim, DongHyun Kim, Kyoung eun Chang, Kieyoung Woo, Kisang Yoon, Hyunki Ko, Junoh Kim, Kwansik Cho, Ho-Chul Ji, Sung-In Kim, Jungbin Yun, Bumsuk Kim, Kyungho Lee, Jesuk Lee System LSI Division, Samsung Electronics Co., Semiconductor R&D Center, Samsung Electronics Co. Presentation |
| R01.3 | A 0.45um-pitch Photodiode Based 1-layer Dual Pixel for CMOS Image Sensor with High Full-Well Capacity and Low Noise Seungki Baek, Sungmin An, Dusik Sul, Masato Fujita, Seungki Jung, Yunha Na, Taesub Jung, Haetaek Jeong, Minsoo Lee, Eunkyung Park, Kyungho Lee, JeSuk Lee Samsung Electronics Co., Ltd. |
| R01.4 | Charge domain type 2.2um BSI Global Shutter pixel with Dual Depth DTI Toshifumi Yokoyama, Yoshihiro Noguchi, Masafumi Tsutsui, Yoshiaki Nishi, Masahiko Takeuchi, Masahiro Oda, Fenigstein Amos Tower Partners Semiconductor Co., Ltd., Tower Semiconductor Presentation |
| R01.5 | A RGBZ 1.4 µm Image Sensor for Color and Near-Infrared Indirect Time-Of-Flight Depth Sensing on Monolithic Silicon Clémence Jamin-Mornet, Hugo Dewitte, William Guicquero, Gaëlle Palmigiani, Olivier Saxod, Lionel Gerard, Cyril Bellegarde, Laurent Coindoz-Bernard, Pascal Fonteneau, Arnaud Tournier Université Grenoble Alpes, STMicroelectronics |
Session 2: High Dynamic Range, High Speed, and Global Shutter (I) Session Chair: Johannes Solhusvik (Sony) |
R02.1 | A 400 × 400 3.24 μm 117 dB Dynamic Range 3-layer Stacked Digital Pixel Sensor with Triple Quantization and Fixed Pattern Noise Correction Kwuang-Han Chang, Tsung-Hsun Tsai, Yi-Hsuan Lin, Sheng-Yeh Lai, Hao-Ming Hsu, Hirofumi Abe, Kazuya Mori, Hideyuki Fukuhara, Chih-Hao Lin, Toshiyuki Isozaki, Wei-Chen Li, Wei-Fan Chou, Chien-Chun Lee, Wen-Han Tseng, Wun-Young Leo, Masayuki Uno, Rimon Ikeno, Masato Nagamatsu, Guang Yang, Shou-Gwo Wuu, Andrew Berkovich, Raffaele Capoccia, Song Chen, Zhao Wang, Chiao Liu, Lyle Bainbridge Brillnics Taiwan Inc., Brillnics Japan Inc., Meta, Sesame AI |
| R02.2 | 2.1µm LFM Automotive Pixel with Single Photodiode and 126 dB of Single Exposure Dynamic Range Manuel Innocent, Pei Heng (Benjamin) Hung, Grady Anderson, Bartosz Banachowicz, Harshvardhan Jog, Gurvinder Singh, Bharat Balar, Anirudh Oberoi, Maheedhar Suryadevara onsemi |
| R02.3 | A 12-to-16-bit Column-Parallel CMS-based ADC for High Monotonically Linear Dynamic Range De Xing Lioe, Tomohiro Okuyama, Keita Yasutomi, Keiichiro Kagawa, Shoji Kawahito SUiCTE Co. Ltd, Shizuoka University |
| R02.4 | A CMOS Image Sensor with Pixelwise Triple-CG Modulation and Gain-Regulating Pre-ISP for Single-Frame Adaptive TCG-HDR Imaging Yi Luo, Shahriar Mirabbasi Department of Component Development, vivo Mobile Communication Co., Ltd., Department of Electrical and Computer Engineering, University of British Columbia Presentation |
| R02.5 | On the determination threshold of illumination-adaptive signal selection technology for multi-stage LOFIC CMOS image sensors Yoshihito Hirai, Kohei Takizawa, Takezo Mawaki, Rihito Kuroda Tohoku University |
Session 3: Optics, Noise, Modeling, and Characterization Session Chair: : Bumsuk Kim (Samsung) |
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| R03.1 | Hybrid Optical Structure with 1×1 and 2×2 Micro-lens Mixed Array for Image Resolution Improvement Gyeong Jin Lee, Hyungeun Yoo, Wooseok Choi, Jina Kim, Sangwoo Lee, Sungho Gil, Seunghyeok June, Hyungchae Kim, Yujeong Baek, MinYoung Jung, Junga Koh, Wonjun Kang, EuiYeol Kim, Jungbin Yun, Bumsuk Kim, Kyungho Lee System LSI Division, Samsung Electronics Co., Ltd. |
| R03.2 | Recovery of Random Telegraph Noises in a Stacked CMOS Image Sensor by High-Temperature Annealing after Hot-Carrier Stress Calvin Yi-Ping Chao, Thomas Meng-Hsiu Wu, Charles Chih-Min Liu, Shang-Fu Yeh, Chih-Lin Lee, Honyih Tu, Zhong-Da Wu, Joey Chiao-Yi Huang, Chin-Hao Chang Taiwan Semiconductor Manufacturing Company Presentation |
| R03.3 | Dark Signal Quantization and Random Telegraph Signal in a Quanta Image Sensor Joanna Krynski, Daniel McGrath, Alexandre Le Roch, Sarah Holloway, Lucrezia Migliorin, Vivian Bernard, Valérian Laluca, Alex Materne, Cédric Virmontois, Vincent Goiffon CNES, ISAE-SUPAERO, Université de Toulouse Presentation |
| R03.4 | A General Method to Model Full-Well Capacity for Anti-Blooming Pixels Kaitlin M. Anagnost, Nathan Dougherty, Konstantin Loiko, Yvonne Lee, Michael Guidash, Radu Ispasoiu onsemi, R M Guidash Consulting |
| R03.5 | In-Fab Parameter Characterization for Pinned Photodiodes in CMOS Image Sensors Dongseok Cho, Jae-Kyu Lee, Jonghyun Go, Myung-Jae Lee, Youngcheol Chae Yonsei University, Samsung Electronics Presentation |
Poster Flash Presentation Session Chairs: : Guy Meynants (Photolitics and KU Leuven) and Kazuhiro Morimoto (Canon) |
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| P01 | 10µm Radiation Tolerant Global Shutter Pixel for Operation under High Ionizing Dose Rates of Gamma or X-ray Radiation Pedro Santos, Idham Hafizh, Paul Leroux, Guy Meynants KU Leuven |
| P02 | Mid-infrared Detection using Black Phosphorus on Silicon Heterostructure with Avalanche Multiplication Yen-Ju Lin, Chien-Yu Chen, Chang-Hua Liu, Neil Na Institution of Photonics Technology, National Tsing-Hua University, Artilux Inc. |
| P03 | Fully Depleted CIS Pixel Using Reverse Substrate Bias without Undesirable Leakage Currents Swaraj Bandhu Mahato, Jean-Luc Bacq, Pierre Boulenc, Yun-Tzu Chang, Bert van Lijnschoten, Antonia Malainou, Celso Cavaco imec, Gpixel NV |
| P04 | Improvement of Conversion Gain and Pixel Linearity through Source Follower Drain Design in CMOS image sensors Gyunha Park, Jiyoun Song, Keunyeong Cho, Sooyeon Kim, Yongsang Park, Yoonseok Kim, Joonhyuk Hwang, Changkyu Lee, Myunghae Seo, Hoocheol Lee, Jihun Lim, Jonghyun Go Samsung Electronics Co |
| P05 | Digital Pixel Sensor using Frame Averaging Unit for Fixed-Pattern Noise Correction and Pixel Size Reduction Tsung-Hsun Tsai, Raffaele Capoccia, Kwuang-Han Chang, Hao-Ming Hsu, Yi-Hsuan Lin, Chien-Chun Lee, Chiao Liu Meta, Brillnics Inc. |
| P06 | Efficient Methods for Analyzing the Floating Diffusion, Photodiode, and Transfer Gate of a 4T Pixel and Calibrating TCAD Edward Van Sieleghem, Alexander V. Klekachev, Pierre Boulenc, Mathias Helsen, Dries Liebens, Assaf Lahav Gpixel NV, Gpixel Microelectronics Inc |
| P07 | Improvement of Fixed Pattern Noise and Electrical Cross-Talk in Small-Sized Pixel-Parallel ADCs Yongsuk Choi, Min-Woong Seo, Sanggwon Lee, Bumjun Kim, Yeongseok Shim, Hiroyuki Sugihara, You-Na Lee, Masamichi Ito, Jaehun Jeong, Su-Hyun Han, Gihwan Cho, Hyukbin Kwon, Sung-Jae Byun, Daehee Bae, Sigyoung Koo, Heesung Shim, Jae-Kyu Lee, Jonghyun Go, Jaihyuk Song Semiconductor R&D Center, Samsung Electronics |
| P08 | A Digital Pixel Sensor with 0.17%/-0.32% Non-Linearity and 75.3μW Power Consumption Using Wide-Swing PWM and Embedded 10-bit 3T-GC-eDRAM Cheng-Jhe Li, Guan-Cheng Chen, Chih-Cheng Hsieh National Tsing Hua University |
| P09 | Random Noise Improvement for Pixel-Parallel Single-Slope ADC Masayuki Uno, Kwuang-Han Chang, Tsung-Hsun Tsai, Toshiyuki Isozaki, Rimon Ikeno, Kazuya Mori, Ken Miyauchi, Yi-Hsuan Lin, Sheng-Yeh Lai, Chih-Hao Lin, Wei-Fan Chou, Junichi Nakamura, Guang Yang, Song Chen, Chiao Liu Brillnics Japan Inc., Brillnics Inc., Reality Labs, Meta Platforms Inc. |
| P10 | Noise Performance of a Photovoltaic Receptor for Dynamic Vision Sensors Pablo Fernández-Peramo, Juan A. Leñero-Bardallo, Rui Graça, Tobi Delbruck, Ángel Rodríguez-Vázquez Institute of Microelectronics of Seville (IMSE-CNM), CSIC-Universidad de Sevilla, Spain, Sensors Group, Inst. of Neuroinformatics, UZH-ETH Zurich, Zurich, Switzerland |
| P11 | Parameter Estimation for Column Level Single Slope ADC Comparators Boyd Fowler OmniVision Technologies |
| P12 | Noise Analysis of Pixel-Parallel ADC Masaki Sakakibara, Shin Sakai, Koji Ogawa, Koya Tsuchimoto, Kazuki Nomoto, Tsukasa Miura, Hirotsugu Takahashi, Yusuke Oike Sony Semiconductor Solutions Corporation |
| P13 | Dark-Current Random Telegraph Signal in InGaAs Image Sensor for SWIR domain M. Benfante, C. Durnez, V. Lalucaa, A. Rouvie, A. Le Roch, C. Virmontois Expleo France, Centre National d’Etudes Spatiales (CNES) |
| P14 | 0.3e- Read Noise @30fps 9.5Mpixel CMOS Image Sensor for Scientific Applications Requiring Photon Counting Steve Mims, Kwang Bo Cho, Shabnam Ansari, Hung Do, Khai Nguyen, William Tian, Angel Lopez, Son Vo Fairchild Imaging Inc. |
| P15 | ORION sensor 10um 66Mpixel high dynamic range and sub-electron dark noise image sensor Jose Segovia, Alberto Villegas, Rafael Dominguez, Loli Pardo, Alex Charlet, Luis Alba, Sony Cherivan, Jason Nottingham, Len Colavito, Ana Gonzalez, Ángel Rodríguez-Vázquez Teledyne Anafocus, Teledyne Princeton Instruments, Teledyne Photometrics, Institute of Microelectronics of Seville (IMSE-CNM) |
| P16 | Dual-Channel RAW and YUV Image Output CIS with 130dB DR and LFM for Automotive Applications Jae-Sung An, Tsutomu Kojima, Yorito Sakano, Satoko Iida, Johannes Solhusvik, Naoki Kawazu, Tatsuya Kaneko, Trygve Willassen, Trung Thanh Nguyen, Sumeet Shrestha, Keita Takeuchi, Hideki Tanaka, Erwin Shad, Manuel Moreno Garcia, Tore Martinussen, Yalcin Balcioglu, Milorad Simovic, VanLongDien Phan, Mohammed Saifuddin, Henrik Sundbeck, Ravi Damodaran, Thomas Frimann Koren, David Kristiansen, Jens Landgraf, Brandon Tveito, Vegard Havellen, Arian Nowbahari, Shinji Iwamoto, Jenny Picalausa, Junichiro Azami, Keita Suzuki Sony Semiconductor Solutions (SSS) Europe Design Centre (EUDC), Sony Semiconductor Solutions, Automotive Business Division, Sony Semiconductor Solutions, Research Div. 1, Sony Semiconductor Solutions Europe |
| P17 | Charge-domain signal clamping and extended dark signal cancellation for automotive CMOS image sensors Shinyeol Choi, Haneol Seo, Kyung-min Kim, Minwoo Lee, Mira Lee, Jihun Shin, Jinkyeong Heo, Youngtae Jang, Min-Sun Keel, Juhyun Ko, Jesuk Lee System LSI Division, Samsung Electronics Co., Ltd. |
| P18 | High Dynamic Range Imaging with High Speed MSB Subframe Readout of In-Pixel Counters in SPAD Image Sensors Kosuke Mikawa, Hiroki Koda, Toshinori Otaka, Shunichi Sato, Yusuke Kameda, Yoshihiro Maeda, Takayuki Hamamoto Tokyo University of Science, Sophia University, Shibaura Institute of Technology |
| P19 | Variable Dynamic Range CMOS Image Sensor with Area-Efficient LOFIC Pixel and Readout Circuit Ai Otani, Ryotaro Hotta, Ayaka Banno, Hiroaki Ogawa, Ken Miyauchi, Yuki Morikawa, Hideki Owada, Isao Takayanagi, Shunsuke Okura Research Organization of Science and Engineering Ritsumeikan University, Brillnics Japan Inc. |
| P20 | A dual mode PWM based 4T pixel CMOS image sensor for higher dynamic range and low power imaging applications Prayag Jaysing Wakale, Rahul Kumar Singh, Nitin Gupta, Vibhav Patel, Mukul Sarkar Indian Institute of Technology, Delhi, 23rdiTech (DV2JS Innovation LLP), Delhi |
| P21 | Dislocation-free Ge/Si coupling at LCM of their lattice constants, replacing InGaAs/InP T. Goji Etoh, Kentarou Sawano, Taeko Ando, Ryota Mizoguchi, Sota Oshima, Yoshinari Sugiyama School of Science and Engineering, Ritsumeikan University, School of Science and Engineering, Tokyo City University, Elionix Inc. |
| P22 | Small Diameter SAG-based InGaAs/InP SPAD for 1550 nm photon counting Ekin Kizilkan, H. K. Yildirim, Utku Karaca, Claudio Bruschini, Omid Salehzadeh, Anthony J. SpringThorpe, Alexandre W. Walker, Costel Flueraru, Oliver Pitts, Edoardo Charbon EPFL, NRC |
| P23 | Pixelated On-Chip Amorphous Silicon Polarizers for Near Infrared Imaging on CMOS Image Sensors Raphaël Mulin, Olivier Jeannin, Clémence Jamin-Mornet, Matthieu Boffety, Jérôme Vaillant STMicroelectronics, Université Grenoble Alpes, Univ. Paris-Saclay |
| P24 | Delta-doped CMOS Image Sensors for NASA’s Habitable Worlds Observatory Michael E. Hoenk, Nathan Bush, April Jewell, Gillian Kyne, Charles Shapiro, John Hennessy, David Schiminovich, Kevin France, David Morris, John Tower, David Keller, Roger Smith, Timothee Greffe, Fiona Harrison, Shouleh Nikzad Jet Propulsion Laboratory, Columbia University, LASP, University of Colorado, Teledyne e2v, SRI International, California Institute of Technology WITHDRAWN |
| P25 | Avalanche detectors in 110nm CMOS for high-energy radiation imaging and sub-nanosecond timing Lucio Pancheri, Jacopo Endrizzi, Thomas Corradino, Umberto Follo, Giulia Gioachin, Chiara Ferrero, Marco Mandurrino, Manuel Da Rocha Rolo, Stefania Bufalino, Angelo Rivetti DII, Università di Trento, TIFPA-INFN, FBK, DET, Politecnico di Torino, DISAT, Politecnico di Torino, INFN Torino |
| P26 | Voltage domain TDI with diffusion enhanced pixels Bart Dierickx, Gaozhan Cai, Bilgesu Sezgin, Koen Liekens, Arne Crouwels, Benjamin Van Camp, Samaneh Ranjbar, Ben Debrabanter, Ali Abbas, Walter Verbruggen Caeleste BV |
| P27 | Design of 2-Megapixel, Global Shutter, 120fps, 5µm-Pixel, ROICs for Colloidal Quantum Dots Image Sensors A. Font, M. Sannino, R. Gifreu, C. Bauzá, O. Llados, R. Turchetta, A. Bofill-Petit IMASENIC S.L. |
| P28 | Microbolometer for high-end commercial and defense applications in 12 µm pitch C.G.Jakobson, U.Mizrahi, N.Ben Ari, N.Shiloah, E.Avnon, D.Seref, G.Zohar, R.Raichman, T.Markovitz SCD Semiconductor Devices |
| P29 | Single-layer color router for solid state image sensors: To propagate or not? Peter B. Catrysse, Shanhui Fan E. L. Ginzton Laboratory, Department of Electrical Engineering |
| P30 | Curved CMOS Image Sensors Using SOI Layer Transfer Technology Masahide Goto, Shigeyuki Imura, Hiroto Sato NHK Science & Technology Research Laboratories |
| P31 | Quantum C100, a Wafer Scale CMOS Detector Optimised for 100 keV Cryo-Electron Microscopy El Guerrini, Mohamed Barnard, Sharkawy, Nicola Matthew Hart, Craig Macwaters, Roger Goldsbrough, Angus Kirkland, Liam O’Ryan, Herman Larsen, Iain Sedgwick, Sam W. Hutchings Rutherford Appleton Laboratory |
| P32 | Convex Curved Single-Chip Thin-Film Image Sensors for Distortion-Free Multilens Panoramic Imaging Koki Imamura, Kazunori Miyakawa, Masahide Goto, Hiroto Sato NHK Science & Technology Research Laboratories |
| P33 | Design Mitigations on Pixel and Column ADC for 1 MGy TID and SEE Tolerant CIS I. Hafizh, P. Santos, P. Leroux, G. Meynants, J. Van Rethy, Y. Cao KU Leuven, Magics Technologies |
| P34 | Evaluation of X-ray Induced Degradation of Light Response and Dark Current in BSI CMOS Image Sensors with Backside Deep Trench Isolation Toshiyuki Isozaki, Ken Miyauchi, Rimon Ikeno, Junichi Nakamura Brillnics Japan Inc. |
| P35 | A 400×96 14,467-fps Scan Rate Low Rolling Shutter Distortion CMOS Image Sensor using 12-bit Error- Averaging Column Parallel Pipelined ADC Yohei Teranishi, Toshinori Otaka, Shunichi Sato, Takayuki Hamamoto Tokyo University of Science |
| P36 | PlatonSPAD: A novel SPAD sensor for large-scale high-resolution particle detectors Kodai Kaneyasu, Till Dieminger, Matthew Franks, Davide Sgalaberna, Claudio Bruschini, Edoardo Charbon EPFL, ETH Zürich |
| P37 | Low-Light High Dynamic Range Single Frame Image Denoising for Quanta Image Sensors Yiheng Chi, Preston Rahim, Stanley H. Chan DeepLux Technology Inc. |
| P38 | A 250 μm x 12.5 μm rectangular pixel with resistive poly gate for line scan CMOS image sensor Xiaoliang Ge, Alexander V. Klekachev, Harada Shingo, Yang Liu, Assaf Lahav Gpixel |
| P39 | Investigating Diverse Parameters for Characterizing Spatial Contrast Transfer in CMOS Event-Based Cameras Louise Baehr, Damien Joubert, Magali Estribeau, Florian Le Goff, Vincent Goiffon Prophesee, ISAE-SUPAERO, Universit´e de Toulouse |
| P40 | Transporter: A 128×4 SPAD Imager with On-chip Encoder for Spiking Neural Network-based Processing Yang Lin, Claudio Bruschini, Edoardo Charbon EPFL |
| P41 | A Study on a Feature Extractable CMOS Image Sensor for On-Chip Image Classification Shunsuke OKURA, Yudai MORIKAKU, Yu Osuka, Ryuichi UJIIE, Daisuke MORIKAWA, Hideki SHIMA, Kota YOSHIDA Ritsumeikan University, Nisshinbo Micro Devices Inc. |
| P42 | Bandwidth efficient frame-based CMOS image sensor for edge and contour detection applications Akhlesh Rajak, Vibhav Patel, Mukul Sarkar Indian Institute of Technology, Delhi, India, DV2JS Innovation LLP (3rdiTech), Delhi, India |
| P43 | Real-time Crosstalk Mitigation Method Using On-Chip ISP in iToF System Daeho Kim, Hogyun Kim, Minsik Kim, Seong-Won Jo, Sangil Lee, Taemin An, Jaewon Choi, Jaeil An, Yundong Chang, Sunhwa Lee, Amit Eisenberg, Zviel Halachmi, Yaron Ukrainitz, Eli Balta, Omri Amrani, Chen Rimoch, Taeer Weiss, Shai Shamir, Maya Vishnevsky, Yonathan Munwes, Il-Pyeong Hwang, Youngkyun Jeong, Juhyun Ko, Jesuk Lee System LSI Division, Samsung Electronics Co., Ltd. |
| P44 | A 256 × 256 Flash-LiDAR SPAD Imager with Distributed Background Suppression and Adaptive Event Detection for Space Applications in 110nm CIS Technology Enrico Manuzzato, Luca Parmesan, Christophe Meier, Nguyen David, Holzer Jannis Serge, Christophe Pache, Roberto Passerone, Leonardo Gasparini FBK – Fondazione Bruno Kessler, CSEM – Swiss Center for Electronics and Microtechnology, University of Trento |
| P45 | 3D-Stacked SPAD Sensor with In-Pixel Multi-Frame Storage for Photon Counting and Time Resolved Applications Tarek Alabbas, Yiyang Liu, Neil Calder, Robert Henderson Ouster UK Ltd., The University of Edinburgh |
| P46 | A Multi-Mode Pixel with Photodiode and Clock-Recharged SPAD Operation for Continuous Recording Applications Xin Sun, Maciej Wojtkiewicz, Istvan Gyongy, Srinjoy Mitra, Filip Kaklin The University of Edinburgh, STMicroelectronics |
| P47 | 10 μm Backside Illuminated SPAD cell with Novel Dielectric-Filled DTI Scheme for optical Isolation Becky Lavi, Adi Birman, Dmitry Veinger, Nobuyoshi Takahashi, Shirly Regev, Amos Fenigstein Tower Semiconductor, Tower Partner Semiconductor Co., Etesian Semiconductor Ltd |
| P48 | A 300×150 Single Photon Active Event Sensor Ward van der Tempel, Jean-Sébastien Staelens, Ségolène Rogge, Arman Alaïe, Christian Mourad VoxelSensors |
| P49 | Design and characterization of single-photon avalanche diodes in deep-cryogenic applications Won-Yong Ha, Francesco Gramuglia, Eng Huat Toh, Ping Zheng, Yew Tuck Chow, Alex Kish, Hongzhi Sun, Adam Para, Carlos Escobar, David Christian, Paul M. Rubinov, Farah Fahim, Edoardo Charbon AQUA Laboratory, EPFL, GlobalFoundries, Fermilab |
| P50 | NIR Sensitivity Enhanced 55nm BCDLite® FSI SPAD F. Gramuglia, Y. Sun, E. H. Toh, P. Zheng, Y. Ng, D. Kandasamy, L. F. Tan, Y. T. Chow, S. Chwa, V. Dhulla, J. Hoentschel GlobalFoundries Ltd. |
Tuesday 3 June 2025 |
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| Session 4: Pixel Design and Process Technology (II)
Session Chair: Manlyun Ha (DB Hitek) |
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| R04.1 | A Twisted Charge Transfer Structure for All-directional Autofocus CMOS Image Sensor Daiki Shirahige, Koichi Fukuda, Hajime Ikeda, Yusuke Onuki, Ginjiro Toyoguchi, Kohei Okamoto, Shunichi Wakashima, Hiroshi Sekine, Shuhei Hayashi, Ryo Yoshida, Junji Iwata, Yasushi Matsuno, Katsuhito Sakurai, Hiroshi Yuzurihara, Takeshi Ichikawa Device Technology Development Headquarters, Canon Inc., Graduate School of Engineering, Tohoku University, Imaging Business Operations, Canon Inc. |
| R04.2 | Design Consideration of Front Deep Trench Isolation (FDTI) in Small-pitch, Dual-Photodiode Pixels Jonghyun Go, Keunyeong Cho, Changkyu Lee, Jinyoung Kim, Yongsang Park, Minkwan Kim, Taehoon Kim, Jiyoun Song, Dami Park, Sooyeon Kim, Gyunha Park, Hyuk Hur, Jae Ho Kim Samsung Electronics Presentation |
| R04.3 | Airgrid with near-ideal structure for enhanced performance and reliability Xing Chen, Kun Li, Jeremiah Hebding, Vinayak Rastogi, Zhen Xu, Doug Lee, Yubin Zhang, Charisse Zhao, El Mehdi Bazizi, Man-Ping Cai, Haim Pearl, Shimon Levi, Michael Chudzik Applied Materials Inc. |
| R04.4 | Near-infrared sensitivity enhancement of silicon photodiode with plasmonic grating Koya Okazaki, Nobukazu Teranishi, Takahito Yoshinaga, Atsushi Ono Graduate School of Integrated Science and Technology, Shizuoka University, Research Institute of Electronics, Shizuoka University |
| R04.5 | Deep trench isolation via PLAD B2H6 passivation process for pixel scaling in advanced CMOS image sensors V. Bhosle, H. Chang, M. Cai, L. Xue, A. Lo, D. Raj Applied Materials, Inc. |
Session 5: High Dynamic Range, High Speed, and Global Shutter (II) Session Chair: Vladimir Koifman (Analog Value) |
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| R05.1 | A 2.1μm High Dynamic Range CMOS Image Sensor with Sub-pixel and Lateral Overflow Integration Capacitor Architecture Shunta Noguchi, Satoko Iida, Naoya Sato, Shinichiro Izawa, Takayuki Yamanaka, Nan Jiang, Yorito Sakano, Yusuke Oike Sony Semiconductor Solutions Corp., Sony Semiconductor Manufacturing Corp. Presentation |
| R05.2 | Programmable Dynamic Range Extension up to 110 dB Based on Charge-Splitting Method with 4-Tap CMOS Image Sensor Yu Feng, Yusuke Tanihata, Kamel Mars, Keita Yasutomi, Shoji Kawahito, Keiichiro Kagawa Graduate School of Science and Technology, Shizuoka University, Graduate School of Integrated Science and Technology, Shizuoka University, Faculty of Science and Technology, Shizuoka Institute of Science and Technology, Research Institute of Electronics, Shizuoka University |
| R05.3 | Charge Overflow Control of A 3.96-µm 124dB HDR-DPS for Triple and Single Quantization Dual-Channel Operation Ken Miyauchi, Hsin-Li Chen, Toshiyuki Isozaki, Hideki Owada, Rimon Ikeno, Kazuya Mori, Masayuki Uno, Hideyuki Fukuhara, Hirofumi Abe, Masato Nagamatsu, Isao Takayanagi, Chih-Hao Lin, Wen-Chien Fu, Shou-Gwo Wuu, Song Chen, Ramakrishna Chilukuri, Wei Gao, Andrew P. Hammond, Tsung-Hsun Tsai, Chiao Liu Brillnics Japan Inc., Brillnics Inc., Reality Labs, Meta Platforms Inc. |
| R05.4 | Automotive 135dB Dynamic Range Image Sensor Enabled by 13-fF In-pixel Capacitor and Novel Pre-discharge Readout Architecture Yiliang Song, Yunfei Gao, Bin Lu, Na Lu, Wei Wang, Guangpeng Zhang, Pengfei Yu, and Fei Song Shenzhen Metasilicon Co., Ltd WITHDRAWN |
| R05.5 | High Performance CMOS Logarithmic Sensor with Continuous Adaptive FPN Correction Yang NI Spectrum in Motion France |
Wednesday 4 June 2025 |
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| Session 6: Depth Sensing, Time of Flight, and SPAD Devices (I)
Session Chair: Neale Dutton (STMicroelectronics) |
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| R06.1 | Long-Range iToF Sensing with Hybrid Pulsed-CW Operation enabling High Dynamic Range, Ambient Light Rejection, and In-Chip Depth Calculation Erez Tadmor, Guy Likver, Yossi Halpern, Itai Israel, Zvika Veig onsemi Presentation |
| R06.2 | 320×240 SPAD direct Time-of-Flight Image Sensor and Camera based on In-Pixel Correlation and Switched-Capacitor Averaging Maarten Kuijk, Ayman Morsy, Thomas Lapauw, Thomas Van den Dries, Mohamed.A.Bounouar, Hans Ingelberts, Daniel Van Nieuwenhove ETRO.RDI, SONY Depthsensing Solutions Presentation |
| R06.3 | A Multi-Zone Light-Tracing Hybrid Time-of-Flight CMOS Image Sensor for Low Power Long-Range Outdoor Operations Kamel Mars, Seiya Ageishi, Masashi Hakamata, Tomoaki Sakita, Daisuke Iguchi, Junichiro Hayakawa, Keita Yasutomi, Keiichiro Kagawa, Shoji Kawahito Shizuoka Institute of Science and Technology, Research Institute of Electronics, Shizuoka University, FUJIFILM Business Innovation Corp. |
| R06.4 | Analysis of a coherent 3D imaging sensor for long-range LiDAR Preethi Padmanabhan, Steven Fortune, Andres Forrer, Fabiana Settembrini, Remus Nicolaescu Pointcloud GmbH |
| R06.5 | A Short-Pulse Indirect ToF Imager Using 6-Tap Pixel with Backside Illuminated Structure for High-Speed Charge Demodulation Tomohiro Okuyama, Haruya Sugimura, Gabriel Alcade, Seiya Ageishi, Hyeun Woo Kwen, De Xing Lioe, Kamel Mars, Keita Yasutomi, Keiichiro Kagawa, Shoji Kawahito Shizuoka University, SUiCTE Co. Ltd., Shizuoka Institute of Science and Technology |
Session : Invited Talks Session Chair: : Shoji Kawahito (Shizuoka University) |
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| I01 | The Path of CMOS Image Sensor Technologies introduced to the Market Tetsuo Nomoto Sony Semiconductor Solutions Corporation Presentation |
| I02 | Designing task-oriented cameras by machine learning Hajime Nagahara D3 Center, Osaka University Presentation |
Session 7: Smart and Event-based Session Chair: Andreas Suess (Google) |
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| R07.1 | Asynchronous Depth Sensing through Direct Time-of-Flight Flash LiDAR Yiyang Liu, Rongxuan Zhang, Filip Taneski, Istvan Gyongy, Robert K. Henderson The University of Edinburgh Presentation |
| R07.2 | Towards a physically realistic computationally efficient DVS pixel model Rui Graca, Tobi Delbruck Sensors Group, Inst. of Neuroinformatics, UZH-ETH Zurich Presentation |
| R07.3 | Pixel Design of Gain-Boosted Event-Based Vision Sensor to Control Event Noise and Latency at Low Illuminance M. Tsukamoto, Y. Sato, F. Mochizuki, H. Takahashi, K. Yamashita, A. Niwa, T. Yamaguchi, H. Wakabayashi, Y. Oike Sony Semiconductor Solutions Corporation Presentation |
| R07.4 | A DVS sensor with a Photovoltaic Receptor Pablo Fernández-Peramo, Juan A. Leñero-Bardallo, Ángel Rodríguez-Vázquez Institute of Microelectronics of Seville (IMSE-CNM), CSIC-Universidad de Sevilla, Spain Presentation |
Session 8: Beyond Visible and Scientific Session Chair: Pierre Magnan (ISAE) |
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| R08.1 | 83.5 dB Dynamic Range Lead-Free SWIR Image Sensors Based on Monolithic Fabrication of InAs Thin-Film Quantum Dot Photodiodes Myonglae Chu, Wenya Song, Joo Hyoung Kim, Tristan Weydts, Vladimir Pejovic, Minhyun Jin, Sang Yeon Lee, Yoora Seo, Jonas Bentell, Abu Bakar Siddik, Isabel Pintor Monroy, Marina Vildanova, Arman Uz Zaman, Tae Jin Yoo, Antonia Malainou, Wagdy Hussein, Annachiara Spagnolo, Gauri Karve, Itai Lieberman, Pawel E. Malinowski imec |
| R08.2 | Optimized BSI CMOS Pixel for both UV and Visible Light N. Fassi, J.-P. Carrère, M. Estribeau, F. Omeis, E. Leon Perez, K. Jouannic, M. Orru, C. Augier, T. Combier, C. Blanc, A.S. Sodjo, P. Magnan, V.Goiffon STMicroelectronics, ISAE-SUPAERO Presentation |
| R08.3 | A Quantum-dot-based CMOS Image Sensor with Direct X-ray Conversion for Nondestructive Testing Chun-Min Zhang, Riccardo Quaglia, Artem Shulga, Vincent Goossens, Paula Blanca Cruz, Rémy Vuagniaux, Pierre-François Rüedi Edge AI & Vision Systems Group, Centre Suisse d’Electronique et de Microtechnique (CSEM), QDI Systems |
| R08.4 | A 5,000 fps, 4Megapixel, rad-tolerant, wafer-scale CMOS image sensors for the direct detection of electrons and photons A. Scott, C. Bauzà, A. Bofill-Petit, A. Font, M. Gargallo, R. Gifreu, K. Latif, M. Giulioni, O. Llados Cos, A. Mollà Garcia, M. Sannino, R. Turchetta* IMASENIC |
Thursday 5 June 2025 |
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| Session 9: Depth Sensing, Time of Flight and SPAD Devices (II)
Session Chair: Preethi Padmanabhan (Pointcloud) |
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| R09.1 | 3D-Stacked 1Megapixel Dual-Time-Gated Color SPAD Image Sensor with Simultaneous Dual Image Output Architecture for Efficient Sensor Fusion K. Chida, K. Morimoto, N. Isoda, H. Sekine, T. Sasago, Y. Maehashi, S. Mikajiri, K. Tojima, M. Shinohara, A. Abdelghafar, H. Tsuchiya, K. Inoue, S. Omodani, A. Ehara, J. Iwata, T. Itano, Y. Matsuno, K. Sakurai, T. Ichikawa Canon Inc. Presentation |
| R09.2 | Over 2 Million Frames per Second 128×128 Macropixel 3D-Stacked Burst SPAD-Based Image Sensor Yuanyuan Hua, Maciej Wojtkiewicz, Francescopaolo Mattioli Della Rocca, Ahmet T Erdogan, Lars Fisher, Robert K Henderson The University of Edinburgh, Sony EUTDC Presentation |
| R09.3 | Range ambiguity cancellation for continuous-wave indirect ToF image sensors Bumsik Chung, Il-Pyeong Hwang, Daeyun Kim, Jonghan Ahn, Daeho Kim, Myunghan Bae, Jiheon Park, Inho Song, Hogyun Kim, Minsik Kim, Taemin An, Hyeyeon Lee, Youngkyun Jeong, Min-Sun Keel, Juhyun Ko, Jesuk Lee System LSI Division, Samsung Electronics Co., Ltd. Presentation |
| R09.4 | Stress Testing of Spiking Neural Network-based TDC-less dToF Jack I. MacLean, Brian D. Stewart, Istvan Gyongy The University of Edinburgh, STMicroelectronics Imaging Division Presentation |
| R09.5 | Reconfigurable, large-format D-ToF/photon-counting SPAD image sensors with embedded FPGA for scene adaptability Tommaso Milanese, Baris Can Efe, Claudio Bruschini, Nobukazu Teranishi, Edoardo Charbon AQUA, STI School of engineering, ´Ecole polytechnique f´ed´erale de Lausanne, Research Institute of Electronics, Shizuoka University Presentation |
Session 10: Specialty & New Applications Session Chair: Dan McGrath (TechInsights) |
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| R10.1 | Advanced Active Deep Trench Designs for Enhanced Charge Transfer Performances in CCD-on-CMOS Image Sensor Antoine Salih Alj, Pierre Touron, Jean-Pierre Carrère, Stéphane Demiguel, Cédric Virmontois, Valérian Lalucaa, Julien Michelot, Pierre Magnan, Vincent Goiffon ISAE-SUPAERO, STMicroelectronics, Thales Alenia Space, CNES, Pyxalis Presentation |
| R10.2 | An 8.7Mpixel 240fps CMOS Image Sensor with 4 × 4 Pixel-Block Local Adaptation of Resolution, Frame Rate, and Exposure Time for Scene Adaptive Imaging Kohei Tomioka, Kodai Kikuchi, Akira Honji, Takenobu Usui, Kazuya Kitamura, Shoji Kawahito NHK Science & Technology Research Laboratories, Shizuoka University Presentation |
| R10.3 | A 640×480 Resolution 326,000fps Continuous-Mode Ultra-High Speed Global-Shutter CMOS BSI Imager with Exceptional Light Sensitivity Jean-Luc Bacq, Mandar Thite, Roeland Vandebriel, Swaraj Bandhu Mahato, Philippe Coppejans, Jonathan Borremans, Linkun Wu, Kuba Rączkowski, Ismail Cevik, Vasyl Motsnyi, Luc Haspeslagh, Andreas Suess, Brandon Flon, Dan Jantzen, Phil Jantzen, Celso Cavaco, Annachiara Spagnolo imec, Pharsighted Presentation |
| R10.4 | High-Frame Rate Low-Noise Global Shutter CMOS Image Sensor for High-Speed Machine Vision Abhinav Agarwal, Jatin Hansrani, Kazuhisa Suzuki, Karthik Venkatesan, Wilson Law, Varun Shah, Kai Ling Ong, Danny Marine, Oleksandr Rytov, Tim Lu, Neil Kumar, Edward Enriquez, Liviu Oniciuc, Sam Bagwell, Loc Truong, Anders Andersson, Radu Corlan Forza Silicon (AMETEK Inc.), Vision Research (AMETEK Inc.) Presentation |
| R10.5 | Linkable Self-Coded CMOS Image Sensor with Serial Communication Interface for Compact Omnidirectional Lensless Cameras Yuya Miyagi, Fuki Hosokawa, Tomoki Nakamura, Kiyotaka Sasagawa, Jun Ohta, Tomoya Nakamura, Keiichiro Kagawa Shizuoka University, Nara Institute of Science and Technology, Osaka University |
